CHEMT18PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Silicon Transistor VOLTAGE 12 Volts APPLICATION * Small Signal Amplifier . C HEMT18 PT CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SOT-563) * Low saturation voltage VCE(sat)=-0.25V(max.)(IC=200mA) * Low cob. Cob=6.5pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. * Two the 2SA2018 in one package. * PNP Silicon Transistor 0.9~1.1 0.15~0.3 (3) (4) SOT-563 (1) (5) 0.50 0.50 1.5~1.7 MARKING * T8 1.1~1.3 0.5~0.6 0.09~0.18 6 4 CIRCUIT 1.5~1.7 1 3 Dimensions in millimeters SOT-563 2SA2018 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICP Pc TSTG TJ Note 1. Single Pulse Pw=1ms 2. 120mW per element must not be exceeded Each teminal mounted on a recommended land. 2004-07 PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage CONDITIONS − − − − MIN. MAX. -15 -12 -6 -500 -1000 150 +150 150 UNIT V V V mA mW O DC Output current power dissipation Storage temperature Junction temperature NOTE.1 NOTE.2 − − −55 − C C O RATING CHARACTERISTIC CURVES ( CHEMT18PT ) 2SA2018 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS IC=-1mA IC=-10uA IE=-10uA VCB=-15V VEB=-6V VCE=-2V,IC=-10mA IC=-200mA,IB=-10mA VCB=-10V,IE=0mA,f=1MHZ VCE=-2V,IE=10mA,f=100MHZ MIN. -12 -15 -6 − − 270 − − − TYP. − − − − − − -100 6.5 260 − − − -100 -100 680 -250 − − MAX. V V V nA nA − mV pF MHz UNIT BVCEO Collector-emitter breakdown voltage BVCBO Collector-base breakdown voltage BVEBO ICBO IEBO hFE VCE(sat) Cob fT Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHEMT18PT ) 2SA2018 Typical Electrical Characteristics Fig.1 Ground emitter propagation characteristics 1000 Fig.2 DC current gain vs. collector current 1000 Ta=125 C 25 C DC CURRENT GAIN : hFE O O COLLECTOR CURRENT : IC(mA) VCE=2V pulsed VCE=2V pulsed -40 C 100 O 100 10 Ta=125 C Ta=25 C O O O 10 Ta=-40 C 1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR CURRENT : IC(mA) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) Fig.3 Collector-emitter saturation voltage vs. collector current ( I ) Ta=25 C pulsed O Fig.4 Collector-emitter saturation voltage vs. collector current ( II ) 1000 IC/IB=20 pulsed 100 Ta=125 C Ta=25 C 10 Ta=-40 C O O O 100 Ta=125 C O Ta=25 C O Ta=-40 C O 10 1 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) RATING CHARACTERISTIC CURVES ( CHEMT18PT ) 2SA2018 Typical Electrical Characteristics Fig.5 Base-emitter saturation voltage vs. collector current BASER SATURATION VOLTAGE : VBE(sat)(mV) Fig.6 Gain bandwidth product vs. collector current 1000 TRANSITION FREQUENCY : fT(MHZ) 1000 IC/IB=20 pulsed Ta=-40OC O Ta=25 C O Ta=125 C VCE=2V O Ta=25 C pulsed 100 100 10 10 1 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC(mA) EMITTER CURRENT : IE(mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 1000 IE=0A f=1MHZ O Ta=25 C EMITTER INPUT CAPACITANCE : Cib (pF) 100 Cib 10 Cob 1 1 10 100 1000 COLLECTOR TO BASE VOLTAGE : VCB(V)