CHEMX3PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Silicon Transistor VOLTAGE 50 Volts APPLICATION * Small Signal Amplifier . C HEMX3PT CURRENT 150 mAmpere FEATURE * Small surface mounting type. (SOT-563) * Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. * Two the 2SC2412K in one package. * NPN Silicon Transistor 0.9~1.1 0.15~0.3 (3) (4) SOT-563 (1) (5) 0.50 0.50 1.5~1.7 MARKING * X3 1.1~1.3 0.5~0.6 0.09~0.18 CIRCUIT 3 1 1.5~1.7 4 6 Dimensions in millimeters SOT-563 2SC2412K LIMITING VALUES MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA ≤ 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 60 50 7 150 150 15 150 +150 +150 +150 UNITS Volts Volts Volts mAmps mAmps mAmps mW o C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2004-11 RATING CHARACTERISTIC CURVES ( CHEMX3PT ) 2SC2412K CHARACTERISTICS ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Collector Capacitance Transition Frequency CONDITION IC=50uA IC=1mA IE=50uA IE=0; VCB=60V IC=0; VEB=7V VCE=6V IC=1mA IC=50mA; IB=5mA IE=ie=0; VCB=12V; f=1MHz IC=2mA; VCE=12V; f=100MHz SYMBOL BVCBO BVCEO BVEBO ICBO ICEO hFE VCEsat Cob fT MIN. 60 50 7 120 TYPE 2 180 MAX. 0.1 0.1 560 0.4 3.5 Volts pF MHz uA UNITS Volts Volts Volts RATING CHARACTERISTIC CURVES ( CHEMX3PT ) 2SC2412K Typical Electrical Characteristics Fig.1 50 Grounded emitter propagation characteristics VCE=6V COLLECTOR CURRENT : IC (mA) Fig.2 100 Grounded emitter output characteristics 0.50mA mA 0.45 A 0.40m 35mA 0. 0.30mA 500 Fig.3 DC current gain vs. collector current (1) Ta=25OC Ta=25OC COLLECTOR CURRENT : IC (mA) 20 10 5 Ta=100 OC 25 ΟC 55 OC DC CURRENT GAIN : hFE 80 200 60 0.25mA 0.20mA VCE=5V 3V 1V 100 2 1 0.5 0.2 0.1 0 40 0.15mA 0.10mA 50 20 0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0 20 10 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0.5 1 2 5 10 2 0 50 100 200 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (2) 500 Ta=100OC COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig. 5 Collector-emitter saturation voltage vs. collector current 0.5 Fig.6 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=5V Ta=25 0.5 IC/IB=10 DC CURRENT GAIN : hFE 200 25OC -55OC 0.2 IC/IB=50 20 10 0.2 Ta=100OC 25OC -55OC 100 0.1 0.05 0.1 0.05 50 0.02 0.02 20 10 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Gain bandwidth product vs. emitter current BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) TRANSITION FREQUENCY : fT (MHz) Fig.8 Base-collector time constant vs. emitter current Ta=25OC f=32MHZ VCB=6V 500 Ta=25O VCE=6V 200 100 200 50 100 20 50 0.5 10 0.2 0.5 1 2 5 10 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) EMITTER CURRENT : IE (mA)