CHEMZ7PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Silicon Transistor VOLTAGE 15 Volts APPLICATION * Small Signal Amplifier . CHEMZ7PT CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SOT-563) * Low saturation voltage VCE(sat)=0.25V(max.)(IC=200mA) * Low cob. Cob=7.5pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. * Both the 2SC5585 & 2SA2018 in one package. * NPN / PNP Silicon Transistor 0.9~1.1 0.15~0.3 (3) (4) SOT-563 (1) (5) 0.50 0.50 1.5~1.7 MARKING * Z7 1.1~1.3 0.5~0.6 0.09~0.18 CIRCUIT 6 4 1.5~1.7 1 3 Dimensions in millimeters SOT-563 2SC5585 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Icp PC TSTG TJ Total power dissipation Storage temperature Junction temperature PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Output current CONDITIONS − − − − NOTE.1 NOTE.2 − − −55 − MIN. MAX. 15 12 6 500 1000 150 +150 150 O UNIT V V V mA mW C C O Note 1. Single pulse Pw=1ms 2. 120mW per element must not be exceeded. Each terminal mounted on a recommended land. 2004-07 2SA2018 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICP Pc TSTG TJ Note 1. Single Pulse Pw=1ms 2SC5585 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS IC=1mA IC=10uA IE=10uA VCB=15V VEB=6V VCE=2V,IC=10mA IC=200mA,IB=10mA VCB=10V,IE=0mA,f=1MHZ VCE=2V,IE=-10mA,f=100MHZ MIN. 12 15 6 − − 270 − − − TYP. − − − − − − 90 7.5 320 − − − 100 100 680 250 − − MAX. V V V nA nA − mV pF MHz UNIT PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage CONDITIONS − − − − MIN. MAX. -15 -12 -6 -500 -1000 150 +150 150 UNIT V V V mA mW O DC Output current power dissipation Storage temperature Junction temperature NOTE.1 − − −55 − C C O BVCEO Collector-emitter breakdown voltage BVCBO Collector-base breakdown voltage BVEBO ICBO IEBO hFE VCE(sat) Cob fT Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency 2SA2018 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS IC=-1mA IC=-10uA IE=-10uA VCB=-15V VEB=-6V VCE=-2V,IC=-10mA IC=-200mA,IB=-10mA VCB=-10V,IE=0mA,f=1MHZ VCE=-2V,IE=10mA,f=100MHZ MIN. -12 -15 -6 − − 270 − − − TYP. − − − − − − -100 6.5 260 − − − -100 -100 680 -250 − − MAX. V V V nA nA − mV pF MHz UNIT BVCEO Collector-emitter breakdown voltage BVCBO Collector-base breakdown voltage BVEBO ICBO IEBO hFE VCE(sat) Cob fT Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency RATING CHARACTERISTIC CURVES ( CHEMZ7PT ) 2SC5585 Typical Electrical Characteristics Fig.1 Ground emitter propagation characteristics 1000 Fig.2 DC current gain vs. collector current 1000 Ta=125 C 25 C DC CURRENT GAIN : hFE O O COLLECTOR CURRENT : IC(mA) VCE=2V pulsed VCE=2V pulsed -40 C 100 O 100 Ta=125 C Ta=25 C 10 O O O 10 Ta=-40 C 1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR CURRENT : IC(mA) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) Fig.3 Collector-emitter saturation voltage vs. collector current ( I ) Ta=25 C pulsed O Fig.4 Collector-emitter saturation voltage vs. collector current ( II ) 1000 IC/IB=20 pulsed 100 100 Ta=125 C O Ta=25 C O Ta=-40 C 10 O Ta=125 C 10 Ta=25 C O O Ta=-40 C 1 1 10 100 1000 O 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) RATING CHARACTERISTIC CURVES ( CHEMZ7PT ) 2SC5585 Typical Electrical Characteristics Fig.5 Base-emitter saturation voltage vs. collector current BASER SATURATION VOLTAGE : VBE(sat)(mV) Fig.6 Gain bandwidth product vs. collector current 1000 TRANSITION FREQUENCY : fT(MHZ) 1000 IC/IB=20 pulsed Ta=-40OC O Ta=25 C O Ta=125 C VCE=2V O Ta=25 C pulsed 100 100 10 10 1 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC(mA) EMITTER CURRENT : IE(mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 1000 IE=0A f=1MHZ O Ta=25 C EMITTER INPUT CAPACITANCE : Cib (pF) 100 Cib 10 Cob 1 1 10 100 1000 COLLECTOR TO BASE VOLTAGE : VCB(V) RATING CHARACTERISTIC CURVES ( CHEMZ7PT ) 2SA2018 Typical Electrical Characteristics Fig.1 Ground emitter propagation characteristics 1000 Fig.2 DC current gain vs. collector current 1000 Ta=125 C 25 C DC CURRENT GAIN : hFE O O COLLECTOR CURRENT : IC(mA) VCE=2V pulsed VCE=2V pulsed -40 C 100 O 100 10 Ta=125 C Ta=25 C O O O 10 Ta=-40 C 1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR CURRENT : IC(mA) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) Fig.3 Collector-emitter saturation voltage vs. collector current ( I ) Ta=25 C pulsed O Fig.4 Collector-emitter saturation voltage vs. collector current ( II ) 1000 IC/IB=20 pulsed 100 Ta=125 C Ta=25 C 10 Ta=-40 C O O O 100 Ta=125 C O Ta=25 C O Ta=-40 C O 10 1 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) RATING CHARACTERISTIC CURVES ( CHEMZ7PT ) 2SA2018 Typical Electrical Characteristics Fig.5 Base-emitter saturation voltage vs. collector current BASER SATURATION VOLTAGE : VBE(sat)(mV) Fig.6 Gain bandwidth product vs. collector current 1000 TRANSITION FREQUENCY : fT(MHZ) 1000 IC/IB=20 pulsed Ta=-40OC O Ta=25 C O Ta=125 C VCE=2V O Ta=25 C pulsed 100 100 10 10 1 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC(mA) EMITTER CURRENT : IE(mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 1000 IE=0A f=1MHZ O Ta=25 C EMITTER INPUT CAPACITANCE : Cib (pF) 100 Cib 10 Cob 1 1 10 100 1000 COLLECTOR TO BASE VOLTAGE : VCB(V)