CHENMKO ENTERPRISE CO.,LTD
S URFACE MOUNT Dual Digital Silicon Transistor
VOL TA GE 50 Vo l t s
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
C H FMA 7PT
CURRENT 100 m A m p er e
FEATURE
* Small surface mounting type. (SC-74A) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Both the CHDTA143X in one package. Built in bias resistor(R1=4.7kΩ, Typ. )
SC-74A
(1)
(5)
1.7~2.1
(2) (3)
0.95 0.95
2.7~3.1
0.25~0.5 1.4~1.8
0.08~0.2 0.3~0.6
0.935~1.3 0~0.15 2.6~3.0
CIRCUIT
3 R1 R2
4 R1 R2
5
2
1
Dimensions in millimeters
SC-74A
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board.
2004-04
PARAMETER Supply voltage Input voltage
CONDITIONS −
MIN.
MAX. -50 +7 -100 V V
UNIT
-20 − − Tamb ≤ 25 OC, Note 1 − −55 − junction - soldering point −
mA -100 300 +150 150 140 mW
O
Total power dissipation Storage temperature Junction temperature Thermal resistance
C C C/W
O
O
RATING CHARACTERISTIC ( CHFMA7PT )
CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IC=-5mA, VCE=-10.0V f=100MHz = CONDITIONS IO=-100uA; VCC=-5.0V IO=-20mA; VO=-0.3V IO=-10mA; II=-0.5mA VI=-5V VI=0V; VCC=-50V IO=-10mA; VO=-5.0V − − − − 30 3.29 1.7 − MIN. -0.3 − − -0.1 − − − 4.7 2.1 250 TYP. − -2.5 -0.3 -0.18 -0.5 − 6.11 2.6 − KΩ MHz MAX. V V V mA uA UNIT
Note 1.Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHFMA7PT )
Typical Electrical Characteristics Typical
Fig.1 Input voltage vs. output current (ON characteristics)
−100
VO=−0.3V
Fig.2 Output current vs. input voltage (OFF characteristics)
−10m −5m
−2m −1m −500µ −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ
VCC=−5V
INPUT VOLTAGE : VI(on) (V)
−20 −10 −5 −2 −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
Ta=−40°C 25°C 100°C
OUTPUT CURRENT : Io (A)
−50
Ta=100°C 25°C −40°C
0
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(off) (V)
Fig.3 DC current gain vs. output current
VO=−5V
Fig.4 Output voltage vs. output current
OUTPUT VOLTAGE : VO(on) (V)
−1 −500m −200m −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m Ta=100°C 25°C −40°C IO/II=20
1k
DC CURRENT GAIN : GI
500 200 100 50 20 10 5 2 1 −100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m Ta=100°C 25°C −40°C
OUTPUT CURRENT : IO (A)
OUTPUT CURRENT : IO (A)
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