CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor
N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 3 0 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
C HM4600JPT
CURRENT 7.3 Ampere CURRENT 4.6 Ampere
FEATURE
* Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability.
1
SO-8
4.06 (0.160) 3.70 (0.146)
8
CONSTRUCTION
* N-Channel & P-Channel Enhancement in the package
5.00 (0.197) 4.69 (0.185)
4 5
.51 (0.020) .10 (0.012) 1.27 (0.05)BSC
1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002)
.25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228)
CIRCUIT
8
D1 D1 D2 D2 5
1 4 S1 G1 S2 G2
Dimensions in millimeters
SO-8
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
N-Channel
P-Channel
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous
30
-30
V V
±20
7.3
(Note 3)
±20
-4.6
ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range
A 30 2000 -55 to 150 -55 to 150 -20 mW °C °C
Note : 1. Surface Mounted on FR4 Board , t
