CHMN4560CGP

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT CHMN4560CGP 45 Ampere FEATURE * Super High dense cell design for extremely low RDS(ON). * High power and current handing capability. SO3x3 2.29~2.65 3.0~3.25 0.5~0.89 0.37~0.77 1.54~1.94 0.25~0.65 3.15~3.45 2.9~3.2 0.27~0.57 0.3~0.5 0.65(BSC) PIN #1 DOT 0.06~0.2 BY MARKING 0.2~0.4 0.7~0.85 3.15~3.45 CIRCUIT D D D D 8 7 6 5 0.1~0.25 1 S 2 S 3 S Dimensions in millimeters 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating and Store Temperature Range SO3x3 TC = 25 C unless otherwise noted Symbol Limit VDS Units V VGS 60 ±20 ID@RqJc 45 ID@RqJA 13.6 A IDM@RqJc 180 A IDM@RqJA 54.4 A PD 27.8 W TJ,Tstg -55 to 150 C Symbol Limit Units RqJc 4.5 C/W RqJA 50 C/W V A Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 2) 2023-03 ELECTRICAL CHARACTERISTIC ( CHMN4560CGP ) Electrical Characteristics T Symbol C = 25°C unless otherwise noted Parameter Conditions Min 60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS V 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA 2.5 V (Note 3) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance Dynamic Characteristics VDS = VGS, ID = 250 µA 1.2 VGS=10V, ID=4A 7 8.5 VGS=4.5V, ID=3A 8.9 12 mΩ (Note 4) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 865 VDS = 25V, VGS = 0V, f = 1.0 MHz 315 pF 5 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t d(on) Turn-On Delay Time tr Turn-On Rise Time t d(off) Turn-Off Delay Time tf Turn-Off Fall Time VDS=48V, ID=10A VGS=4.5V VDD= 30V I D = 1A , VGS =10 V RGEN= 6 Ω 8.3 2.3 nC 3.8 15 4 nS 37 18 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current 23 A V SD Drain-Source Diode Forward Voltage I S = 14A , VGS = 0 V (Note 3) 1.2 V Notes : 1.Repetitive Rating : Pulse width limited by maximum junction temperature. 2.Surface Mounted on FR4 Board, t < 10 sec. 3.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. 4.Guaranteed by design, not subject to production testing RATING CHARACTERISTIC CURVES ( CHMN4560CGP ) Figure 2. Transfer Characteristics Figure 1. Output Characteristics 100 25 C VGS=10,9,8,4V 64 ID, Drain Current (A) 48 32 VGS=3V 16 0 1 2 3 4 60 40 0 2 Ciss 800 600 Coss 200 Crss 0 5 5 10 15 20 25 2.2 1.9 ID=4A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 150 Figure 5. Gate Charge Mounting Pad Layout (Unit: mm) 2.28 1.70 0.30 3 2.50 0.35 2 0.42 1 0 100 TJ, Junction Temperature( C) VDS=48V ID=10A 4 50 VDS, Drain-to-Source Voltage (V) 0.50 VGS, Gate to Source Voltage (V) RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 1200 0 0 8 6 Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 400 4 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 1000 -55 C 20 0 5 TJ=125 C 0.40 0 80 0.43 1.40 3.35 ID, Drain Current (A) 80 2 4 6 8 Qg, Total Gate Charge (nC) 10 0.65 0.35 200 For AUO (Unit: mm) Recommended Pad Layout (Unit: mm) 0.40 2.50 2.50 2.40 0.30 0.45 1.40 1.70 0.43 0.45 3.35 2.20 3.10 0.42 0.65 0.50 2.28 0.35 0.50 0.35 0.45 0.65