CHN217UPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 0.1 Ampere APPLICATION * Ultra high speed switching C HN217UPT FEATURE * Small surface mounting type. (SC-70/SOT-323) * Two diode elements are connected in series (VFX2) per circuit. * Maximum total power disspation is 200mW. (2) SC-70/SOT-323 * Peak forward current is 300mA. 1.3±0.1 (3) (1) 0.65 2.0±0.2 0.65 CONSTRUCTION * Silicon epitaxial planar 0.3±0.1 1.25±0.1 MARKING * A7 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT (2) (1) (3) Dimensions in millimeters SC-70/SOT-323 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 1uSec. Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CHN217UPT 80 56 80 0.1 4.0 2.0 +150 -55 to +150 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 100mA Maximum Average Reverse Current at VR= 70V NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 6.0 volts. 2. ESD sensitive product handling required. SYMBOL VF IR CHN217UPT 1.20 0.2 UNITS Volts uAmps 2002-5 RATING CHARACTERISTIC CURVES ( CHN217UPT ) FIG. 1 - FORWARD CHARACTERISTICS 1.0 FORWARD CURRENT, (A) REVERSE CURRENT , (A) 100m 10m 1m 25 o C FIG. 2 - REVERSE CHARACTERISTICS 1m 100u 10u 75oC Ta=125oC 1u 100n 10n 1n 25oC -25oC 10u 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 REVERSE VOLTAGE, (V) 100 FORWARD VOLTAGE, (V) 2.0 JUNCTION CAPACITANCE, (pF) Ta = 12 100u FIG. 3 - TYPICAL JUNCTION CAPACITANCE f=1MHz 1.8 1.6 1.4 1.2 1.0 0 5 10 15 20 25 30 35 REVERSE VOLTAGE, (V) 75 o C 5 C o -25 o C