CHP11NPT

CHP11NPT

  • 厂商:

    CHENMKO(力勤)

  • 封装:

  • 描述:

    CHP11NPT - SWITCHING DIODE - Chenmko Enterprise Co. Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
CHP11NPT 数据手册
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 100 mAmpere APPLICATION * Ultra high speed switching C HP11NPT FEATURE * Small surface mounting type. (SC-88/SOT-363) * Multiple diodes in one small surface mount package. * Suitable for high packing density. * Maximum total power disspation is 150*2 mW. * Peak forward current is 300mA. 1.2~1.4 (1) (6) SC-88/SOT-363 0.65 0.65 2.0~2.2 CONSTRUCTION * Silicon epitaxial planar (4) 0.15~0.35 (3) 1.15~1.35 MARKING * DZ 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT (6) (4) (1) (3) D imensions in millimeters SC-88/SOT-363 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 1uSec. Typical Junction Capacitance between Terminal (Note 1) Maximum Reverse Recovery Time (Note 2) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TRR TJ TSTG CHP11NPT 80 56 80 100 4.0 3.5 4.0 +150 -55 to +150 UNITS Volts Volts Volts mAmps Amps pF nSec o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 100mA Maximum Average Reverse Current at VR= 70V SYMBOL VF IR CHP11NPT 1.20 0.1 UNITS Volts uAmps 2003-5 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 6.0 volts. 2. Measured at applied froward current of 5mA and reverse voltage of 6.0 volts. 3. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CHP11NPT ) FIG. 1 - POWER DERAING CURVE POWER DISSIPATION:Pd/PdMax, (%) 125 FORWARD CURRENT, (mA) 100 75 50 25 0 0 25 50 75 100 o FIG. 2 - FORWARD CHARACTERISTICS 50 20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ta=85oC 50oC 25oC 0oC o - 30 C 125 150 AMBIENT TEMPERATURE, ( C) FORWARD VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE 1000 REVERSE CURRENT, (nA) FIG. 4 - REVERSE CHARACTERISTICS JUNCTION CAPACITANCE, (pF) f=1MHz 4 Ta=100oC 100 75oC 10 1 0.1 0.01 50oC 25oC 0oC - 2 25oC 0 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE, (V) 0 20 30 40 50 60 70 80 REVERSE VOLTAGE, (V) FIG. 5 - REVERSE RECOVERY TIME 10 REVERSE RECOVERY TIME, (nS) 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 FORWARD CURRENT, (mA) VR=6V FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT 0.01µF D.U.T. 5K PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE
CHP11NPT
1. 物料型号: - 型号为CHP11NPT。

2. 器件简介: - CHP11NPT是一款表面贴装开关二极管,具有80伏特的电压等级,适用于无铅设备。

3. 引脚分配: - 器件采用小表面积贴装类型(SC-88/SOT-363),在一个小型表面积贴装封装中包含多个二极管,适合高封装密度。

4. 参数特性: - 最大重复峰值反向电压:80伏特 - 最大RMS电压:56伏特 - 最大直流阻断电压:80伏特 - 最大平均正向整流电流:100毫安 - 正向峰值浪涌电流在1微秒:4.0安培 - 典型结电容:3.5皮法 - 最大反向恢复时间:4.0纳秒 - 最大总功率耗散:1502毫瓦 - 峰值正向电流:300毫安

5. 功能详解: - 该器件具有超高速开关特性,小表面积贴装类型,能够在一个小表面积贴装封装中集成多个二极管,适合高封装密度应用。

6. 应用信息: - 适用于需要超高速开关和高封装密度的应用场合。

7. 封装信息: - 封装类型为SC-88/SOT-363,尺寸以毫米为单位。
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