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CHPZ4V3PT

CHPZ4V3PT

  • 厂商:

    CHENMKO(力勤)

  • 封装:

  • 描述:

    CHPZ4V3PT - SILICON PLANAR POWER ZENER DIODES - Chenmko Enterprise Co. Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
CHPZ4V3PT 数据手册
C HENMKO ENTERPRISE CO.,LTD SURFACE MOUNT ZENER SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 3.6V TO 33V CHPZ3V6PT THRU CHPZ33VPT FEATURE * * * * * * * High temperature soldering type. ESD rating of class 3(>16 kV) per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction. Low temperature coefficient voltage 350 mW Rating on FR-4 or FR-5 Board Dual Zener diode structure and connectd in a common anode configuration. .110 (2.80) .082 (2.10) .119 (3.04) SOT-23 .041 (1.05) .033 (0.85) (1) .066 (1.70) (3) MECHANICAL * * * * Voild-free, Transfer-molded, Thermosetting plastic case SOT-23 Packaging. Cathode indicated by polarity band. Mounting position: Any. (2) .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (2) (1) .045 (1.15) .033 (0.85) .019 (0.50) (3) Dimensions in inches and (millimeters) SOT-23 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) Max. Steady State Power Dissipation Max. Operating Temperature Range Storage Temperature Range @TA=25oC SYMBOL PD TJ TSTG VALUE 350 -65 to +150 -65 to +150 UNITS mW o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL R JA MIN. - TYP. - MAX. 357 0.9 UNITS o C/W VF Volts 2002-3 NOTES : 1. The JEDEC type numbers listd have a standaerd tolerance on the normal zener voltage of +5%, Suffix S=+2%. 2. The zener impedance is derived from 1KHz AC voltage, which results when an AC current having an RMS value equal to 10% of DC zener current (IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve to eliminate unstable units. 3. Valid provided that electrodes at distance of 10mm from case are kept ambient temperature. 4. Measured under thermal equilibrium and DC test conditions. 5. The rating listd in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration. ELECTRICAL CHARACTERISTICS ( CHPZ3V6PT THRU CHPZ33VPT ) Zener voltage VZ (V) @ IZT TYPE Min Volts CHPZ3V6PT CHPZ3V9PT CHPZ4V3PT CHPZ4V7PT CHPZ5V1PT CHPZ5V6PT CHPZ6V0PT CHPZ6V2PT CHPZ6V8PT CHPZ7V5PT CHPZ8V2PT CHPZ8V7PT CHPZ9V1PT CHPZ10VPT CHPZ11VPT CHPZ12VPT CHPZ13VPT CHPZ14VPT CHPZ15VPT CHPZ16VPT CHPZ17VPT CHPZ18VPT CHPZ19VPT CHPZ20VPT CHPZ22VPT CHPZ24VPT CHPZ25VPT CHPZ27VPT CHPZ28VPT CHPZ30VPT CHPZ33VPT 3.4 3.7 4.0 4.4 4.8 5.2 5.6 5.8 6.4 7.1 7.7 8.2 8.6 9.4 10.4 11.4 12.4 13.3 14.2 15.2 16.1 17.1 18.0 19.0 20.9 22.8 23.7 25.1 27.1 28.0 31.0 Nom Volts 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 Max Volts 3.8 4.1 4.6 5.0 5.4 6.0 6.4 6.6 7.2 7.9 8.7 9.2 9.6 10.6 11.6 12.7 14.1 14.7 15.8 16.8 17.9 18.9 20.0 21.0 23.1 25.2 26.3 28.9 29.9 32.0 35.0 Test current Maximum Zener impedance IZT (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 2.0 2.0 2.0 2.0 ZZT at IZT () 95 90 90 80 60 40 20 10 15 15 15 15 15 20 20 25 30 30 30 40 40 45 45 55 55 70 70 80 80 80 80 ZZK () 600 600 600 500 400 400 150 150 80 80 80 100 100 150 150 150 170 190 200 200 215 225 225 225 250 250 275 300 300 300 325 at IZK (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.5 Maximum Type Maximum reverse leakage current temperature regulator coefficient current at at o IR at VR TA= 25 C TA= 50oC o (uA) (V) VZ (%/ C) IZM (mA) 2.0 2.0 1.0 3.0 2.0 1.0 3.0 3.0 2.0 1.0 0.7 0.5 0.2 0.1 0.1 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 1.0 1.0 1.0 2.0 2.0 2.0 3.5 4.0 4.0 5.0 5.0 6.0 6.0 7.0 8.0 8.0 8.0 9.8 10.5 11.2 11.9 12.6 13.3 14.0 15.4 16.8 17.5 18.9 19.6 21.0 23.1 -0.06 -0.06 -0.05 +0.03 +0.02 +0.03 +0.04 +0.04 +0.05 +0.05 +0.06 +0.06 +0.06 +0.07 +0.07 +0.07 +0.08 +0.08 +0.08 +0.08 +0.08 +0.08 +0.08 +0.08 +0.09 +0.09 +0.09 +0.09 +0.09 +0.09 +0.09 45 43 40 38 35 32 30 28 25 23 21 19 18 16 15 13 12 11.5 11 10 9.6 9.2 8.7 8.3 7.6 7.0 6.6 6.2 5.9 5.6 5.0 RATING CHARACTERISTIC CURVES ( CHPZ3V6PT THRU CHPZ33VPT ) FIG. 1 - TEMPERATURE COEFFICIENTS) (TEMPERATURE RANGE 55oC TO +150oC) 8 7 6 5 4 3 2 1 0 -1 -2 -3 VZ @ IZT TYPICAL TC VALUES FOR MMBZ5221B SERIES TEMPERATURE COEFFICIENT (mV/ oC) TEMPERATURE COEFFICIENT (mV/ oC) FIG. 2 - TEMPERATURE COEFFICIENTS) (TEMPERATURE RANGE 55oC TO +150oC) 100 TYICAL TC VALUES FOR MMBZ5221B SERIES VZ @ IZT 10 VZ, VZ NOMINAL ZENER VOLTAGE ( V ) VZ, 2 3 4 5 6 7 8 9 10 11 12 1 10 100 VZ NOMINAL ZENER VOLTAGE ( V ) FIG. 5 - TYPICAL CAPACITANCE 1000 TA=25oC 0 V BIAS 1 V BIAS FIG. 6 - TYPICAL LEAKAGE CURRENT 1000 IR,LEAKAGE CURRENT (uA) 100 10 1 0.1 0.01 0.001 0.0001 0.00001 0 10 20 25oC -55oC 150oC C, CAPACITANCE (pF) 100 BIAS AT 50% OF VZ NOM 10 1 1 10 100 30 40 50 60 70 80 90 VZ NOMINAL ZENER VOLTAGE ( V ) VZ NOMINAL ZENER VOLTAGE ( V ) FIG. 7 - ZENER VOLTAGE VERSUS ZENER CURRENT (VZ UP TO 12V) 100 TA=25oC FIG. 8 - ZENER VOLTAGE VERSUS ZENER CURRENT (12V TO 33V) 100 TA=25oC IZ ZENER CURRENT (mA) 10 IZ,ZENER CURRENT 0 2 4 6 8 10 12 10 1 1 0.1 0.1 0.01 0.01 10 30 50 70 90 VZ ZENER VOLTAGE ( V ) VZ ZENER VOLTAGE ( V )
CHPZ4V3PT
1. 物料型号 - 型号:CHPZ3V6PT 至 CHPZ33VPT

2. 器件简介 - 描述:无铅器件,硅平面功率稳压二极管,电压范围从3.6V至33V。 - 特点:高温焊接型、符合人体模型的ESD等级3(大于16kV)、硅平面稳压二极管、硅氧化物钝化结、低温度系数电压、在FR-4或FR-5板上350mW额定功率、双稳压二极管结构并连接在共阳极配置。

3. 引脚分配 - 封装:SOT-23 - 机械特性:无铅、传递成型、热固性塑料封装、SOT-23封装、阴极由极性带标示、安装位置:任意。

4. 参数特性 - 最大额定值和电气特性表格中详细列出了在25°C环境温度下的各项参数,包括但不限于最大整流电流、反向击穿电压等。具体数值需查看完整的数据表。

5. 功能详解 - 稳压二极管具有在反向击穿状态下维持恒定电压的功能,用于电压稳定和保护电路。

6. 应用信息 - 应用:用于电压稳定和电路保护。

7. 封装信息 - 封装类型:SOT-23。 - 封装细节:无铅、传递成型、热固性塑料封装、阴极由极性带标示、安装位置任意。
CHPZ4V3PT 价格&库存

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