CHT06UPNPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN/PNP Silicon AF Transistor Array V OLTAGE 80 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other switching applications. C HT06UPNPT CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated NPN/PNP transistor in one package. (1) (6) 0.95 0.95 (3) (4) 0.25~0.5 1.4~1.8 SC-74/SOT-457 1.7~2.1 2.7~3.1 CONSTRUCTION * NPN/PNP transistor in one package. 0.08~0.2 0.3~0.6 C1 B2 5 E2 4 0.935~1.3 0~0.15 2.6~3.0 CIRCUIT 6 TR2 TR1 1 E1 2 B1 3 C2 D imensions in millimeters SC-74/SOT-457 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. 80 80 4 500 1000 200 330 +150 150 +150 V V V UNIT mA mA mA mW °C °C °C −65 − −65 RATING CHARACTERISTIC CURVES ( CHT06UPNPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO ICEO hFE VCEsat VBE(ON) Cc Ce fT F Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure CONDITIONS IE = 0; VCB = 80 V IC = 0; VCB = 80 V; TA = 150 OC IC = 0; VCE = 60 V IC = 10 mA; VCE = 1.0V; note 1 IC = 100 mA; VCE = 1.0V IC = 100 mA; IB = 10 m A IC = 100 mA; VCE = 1 V IE = ie = 0; VCB = 10V ; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 20 mA; VCE = 5 V ; f = 100 MHz IC = 100 µA; VCE = 5 V ; RS = 1 kΩ; f = 1.0 kHz − − − 100 100 − − − − 100 − MIN. MAX. 100 20 100 − − 250 1.2 12 120 − 4 mV V pF pF MHz dB UNIT nA uA nA PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 105 UNIT K/W RATING CHARACTERISTIC CURVES ( CHT06UPNPT ) Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 10 10 3 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 3 ΙC mA 150 oC 25 oC -50 oC ΙC mA 150 oC 25 oC -50 oC 10 2 5 10 2 5 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 0.2 0.4 0.6 V 0.8 10 -1 0 1.0 2.0 3.0 V 4.0 VCEsat V BEsat DC current gain hFE = f (IC ) VCE = 5V 10 3 h FE 5 100 û C 25 û C -50 û C 10 2 5 Transition frequency fT = f (IC) VCE = 5V 10 3 fT MHz 5 10 2 10 1 5 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 10 1 10 0 10 1 10 2 mA 10 3 ΙC ΙC RATING CHARACTERISTIC CURVES ( CHT06UPNPT ) Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 10 Base-emitter saturation voltage IC = f (VBEsat ), h FE = 10 10 3 10 3 Ι C mA 100 C 25 oC -50 oC o ΙC mA 100 oC 25 oC -50 oC 10 2 5 10 5 2 10 1 5 10 5 1 10 0 5 10 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 V V CEsat 0.8 10 -1 0 0.5 1.0 V 1.5 V BEsat DC current gain hFE = f (IC ) VCE = 1V Collector current IC = f (VBE) VCE = 1V 10 3 h FE 100 oC 10 2 25 oC 10 3 mA ΙC 10 2 5 100 oC 25 oC -50 oC -50 oC 10 1 5 10 1 10 0 5 10 0 -1 10 10 0 10 1 10 2 mA 10 3 10 -1 0 0.5 1.0 V BE V 1.5 ΙC RATING CHARACTERISTIC CURVES ( CHT06UPNPT ) Transition frequency fT = f (IC) VCE = 5V 10 3 MHz fT 5 10 2 5 10 1 10 0 5 10 1 5 10 2 mA 10 3 ΙC