CHT122ZPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN SILICON Transistor V OLTAGE 100 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. C HT122ZPT CURRENT 5 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. * High saturation current capability. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION * NPN SILICON Transistor 3.5+0.2 7.0+0.3 0.9+0.2 MARKING ZBN 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT (1) B C (3) 2 Emitter 3 Collector ( Heat Sink ) E(2) Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Peak Collector Current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. 100 100 5.0 5.0 8.0 2 +150 150 +150 UNIT V V V A A W °C °C °C −65 − −65 RATING CHARACTERISTIC CURVES ( CHT122ZPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICEO ICBO IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain VCE = 50 V VCB = 100 V VEB=5.0V IC = 500 mA; V CE = 3V IC = 3.0A; VCE = 3V CONDITIONS − − − 1000 1000 MIN. MAX. 500 200 2.0 − − UNIT uA uA mA VCEsat collector-emitter saturation voltage IC = 3 .0 A; IB =12m A IC = 5.0 A; IB = 20 m A − − − − 4.0 2.0 4.0 2.5 200 − V V V pF MHz VBEON Cob fT base-emitter saturation voltage IC = 3.0 A; VCE=3.0V collector capacitance transition frequency IE = ie = 0; VCB = 1 0 V; f = 1 MHz IC = 3.0A; VCE = 4 V; f = 1.0 MHz