CHT2000ZPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN SILICON Transistor V OLTAGE 200 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. C HT2000ZPT CURRENT 0.6 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. * High saturation current capability. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION * NPN SILICON Transistor 0.70+0.10 3.5+0.2 7.0+0.3 0.9+0.2 2.0+0.3 MARKING ZMN 0.70+0.10 2.30+0.1 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT (1) B C (3) 2 Emitter 3 Collector ( Heat Sink ) E(2) Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. 200 200 10 600 2 +150 150 +150 UNIT V V V mA W °C °C °C −65 − −65 RATING CHARACTERISTIC CURVES ( CHT2000ZPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current CONDITIONS VCB = 180 V VEB=10V IC = 100uA; V CE = 5V IC = 10mA; VCE = 5V IC = 160mA; VCE =5V − − 3000 3000 3000 MIN. MAX. 500 100 − − − UNIT nA nA DC current gain VCEsat collector-emitter saturation voltage IC = 2 0 mA; IB =25uA IC = 80 mA; IB = 40uA IC =160 mA; IB =100uA − − − − 0.9 1.1 1.2 2.0 V V V V VBEON base-emitter saturation voltage VCE=5V,IC=160mA