CHT200PPT

CHENMKO ENTERPRISE CO.,LTD SMALL FLAT NPN Epitaxial Transistor V OLTAGE 25 Volts CURRENT 5 Ampere C HT200PPT FEATURE * Small flat package. (DPAK) * Low saturation voltage VCE(sat)=0.3V(max.)(IC=500mA) * High saturation current capability. DPAK .050 (1.27) .030 (0.77) .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) CONSTRUCTION * NPN Switching Transistor .228(5..80) .217 (5.40) (1) (3) (2) .394 (10.00) .354 (9.00) .028 (0.70) .019 (0.50) .035 (0.90) .050 (1.27) .020 (0.51) .110 (2.80) .087 (2.20) .181 (4.60) .268 (6.80) .252 (6.40) .024 (0.60) CIRCUIT (1) B C (3) 1 Base 2 Emitter 3 Collector ( Heat Sink ) .023 (0.58) .018 (0.46) E(2) .020 (0.51) Dimensions in inches and (millimeters) DPAK MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature TA ≤ 25OC CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ MIN. -55 MAX. 40 25 8 5 10 1.0 1400 +150 +150 UNITS Volts Volts Volts Amps Amps Amps mW o C C o 2007-7 RATING CHARACTERISTIC CURVES ( CHT200PPT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=40V IC=0; VEB=8V VCE=1V; Note 1 IC=500mA IC=2.0A IC =5.0A; VCE=2V IC=500mA; IB=50mA IC=2A; IB=200mA IC=5A; IB=1A IC=5A; IB=1A IE=ie=0; VCB=10V; f=0.1MHz IC=0.1A; VCE=10V; f=10MHz SYMBOL ICBO IEBO MIN. TYPE MAX. 0.1 0.1 UNITS uA uA DC Current Gain hFE 70 45 10 65 - 180 0.3 0.75 1.8 2.5 80 Volts Volts pF MHz Collector-Emitter Saturation Voltage Base-Emitter Saturatio Voltage Collector Capacitance Transition Frequency VCEsat VBEsat CC fT - Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.