CHT2222TPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Switching Transistor V OLTAGE 40 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. C HT2222TPT CURRENT 0.6 Ampere FEATURE * Small surface mounting type. (SC-75/SOT-416) * High current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. (3) SC-75/SOT-416 0.1 0.2±0.05 0.5 1.6±0.2 0.5 (2) 1.0±0.1 0.1 0.3±0.05 CONSTRUCTION * NPN Switching Transistor 0.1 0.2±0.05 0.8±0.1 (1) MARKING * NT C (3) (1) B 0.15±0.05 0.1Min. 0.6~0.9 0~0.1 1.6±0.2 CIRCUIT E (2) Dimensions in millimeters SC-75/SOT-416 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. 75 40 6 600 800 200 250 +150 150 +150 V V V UNIT mA mA mA mW °C °C °C −65 − −65 RATING CHARACTERISTIC CURVES ( CHT2222TPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V IC = 0; VCB = 60 V; Tj = 125 OC IC = 0; VEB = 5 V IC = 0.1 mA; VCE = 10V; note 1 IC = 1.0 mA; VCE = 10V IC = 10 mA; VCE = 10V IC = 150 mA; VCE = 10V IC = 150 mA; VCE = 1.0V IC = 500 mA; VCE = 10V VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 150 mA; IB = 15 m A IC = 500 mA; IB = 50 m A IC = 150 mA; IB = 10 mA IC = 500 mA; IB = 50 mA IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 20 mA; VCE = 20 V; f = 100 MHz IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 1.0 kHz − − − 35 50 75 100 50 40 − − 0.6 − − − 300 − MIN. MAX. 10 10 10 − − − − 300 − − 300 1 1.2 2.0 8 25 − 4 mV V V V pF pF MHz dB UNIT nA uA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W IC = 10 mA; VCE = 10V;Tamb = -55OC 35 Switching times (between 10% and 90% levels); ton td tr toff ts tf Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 150 mA; IBon = 15 mA; IBoff = −15 m A − − − − − − 35 15 20 250 200 60 ns ns ns ns ns ns RATING CHARACTERISTIC CURVES ( CHT2222TPT ) V CES AT - COLLECTOR-EM ITTER VOLTAGE ( V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector C urrent 500 V CE = 5V C ollector-Emitter Satura tion Voltage vs Collector Cur rent 0. 4 = 10 0. 3 400 300 200 25 °C 125 °C 0. 2 25 °C 12 5 °C 100 - 40 °C 0. 1 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT ( mA) 300 1 10 100 I C - COLLECTOR CURRENT (m A) 500 V BE (ON) - BASE- EMITTER ON VOLTAGE ( V) V BESAT - BASE-EMITTER VOLTAGE (V) Base- Emitter Saturation Voltage vs Collect or Current 1 = 10 - 40 °C Base-Emitter ON Voltage v s Collec tor C urrent 1 VCE = 5V 0. 8 - 4 0 °C 2 5 °C 0.8 25 °C 125 °C 0. 6 12 5 °C 0.6 0. 4 0.4 1 I C 10 100 - COLLECTOR CURRENT ( mA) 500 0. 2 0. 1 1 10 I C - COLLECTOR CURRENT (m A) 25 C ollector-Cutoff Current vs Ambient Temperature I CBO - COLLECTOR C URRENT ( nA) 500 100 10 1 0. 1 V CB Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 CAPACI TANCE ( pF) 16 12 C te = 40V f = 1 MHz 8 C ob 4 25 50 75 100 125 T A - AM BI ENT TEMP ERATU RE (° C) 150 0.1 1 10 REVERSE BI AS VOLTAGE (V) 100 RATING CHARACTERISTIC CURVES ( CHT2222TPT ) Turn On and Turn Off Time s vs Collec tor C urrent 400 I B1 = I B2 = Ic 10 Switching Time s vs Collec tor C urrent 400 I B1 = I B2 = 320 V cc = 2 5 V Ic 10 320 V cc = 2 5 V TIM E ( nS) 240 160 t off TIME ( nS) 240 160 80 0 10 tf td ts tr 80 t on 0 10 100 I C - COLLECTOR CURRENT (m A) 1000 100 I C - COLLECTOR CURRENT (m A) 1000 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 RATING CHARACTERISTIC CURVES ( CHT2222TPT ) CHAR. RELATIVE TO VALUES AT I C= 10mA CHAR. RELATIVE TO VALUES AT TA = 25oC Common Emitte r Characteristics 8 V CE = 10 V T A = 25oC Common Emitte r Characteristics 2.4 2 1.6 1.2 0.8 0.4 0 V CE = 10 V I C = 10 mA h re h ie h fe hoe 6 hoe 4 h re 2 h fe h ie 0 0 10 20 30 40 50 I C - COLLECTOR CURRENT (m A) 60 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 CH AR . RELATIVE TO VALUES AT VCE = 10V Common Emitte r Characteristics 1. 3 1. 25 1. 2 1. 15 1. 1 1. 05 1 0. 95 0. 9 0. 85 0. 8 0. 75 0 5 hoe 10 15 20 25 30 VCE - COLLECTOR VOLTAG E (V) 35 h re h ie I C = 10 mA T A = 25oC h fe RATING CHARACTERISTIC CURVES ( CHT2222TPT ) Test Circuits 30 V 200 16 V 1.0 K 0 200ns 500 Saturated T urn-On Switching Time - 1.5 V 6.0 V NOTE: BVEBO = 5.0 V 1k 37 30 V 1.0 K 0 200ns 50 Saturated T urn-Off Switching Time