CHT3019PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Switching Transistor V OLTAGE 80 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. C HT3019PT CURRENT 1 Ampere FEATURE .041 (1.05) .033 (0.85) SOT-23 CONSTRUCTION .110 (2.80) .082 (2.10) (1) * NPN Switching Transistor .066 (1.70) .119 (3.04) (3) MARKING * HT (2) .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT 1 3 .045 (1.15) .033 (0.85) 2 .019 (0.50) * Small surface mounting type. (SOT-23) * Suitable for high packing density. * High saturation current capability. * Voltage controlled small signal switch. Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-9 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. 120 80 7.0 1000 1500 350 +150 150 +150 V V V UNIT mA mA mW °C °C °C −65 − −65 RATING CHARACTERISTIC CURVES ( CHT3019PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 90 V IC = 0; VEB = 5 V IC = 0.1 mA; V CE = 10V IC = 1.0 mA; VCE = 10V IC = 150 mA; VCE =10V IC = 500 mA; VCE = 10V IC = 1.0 A; VCE = 10V − − 50 90 100 50 15 MIN. MAX. 10 10 − − 300 − − UNIT nA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W VCEsat collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise Þgure IC = 1 50 mA; IB = 15 m A -5 IC = 00 mA; IB = 50 m A IC =1 50 mA; IB =15 mA IE = ie = 0; VCB = 1 0 V; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 50 mA; VCE = 1 0 V; f = 1.0 MHz − − − − − 100 0.2 0.5 1.1 12 60 − 4.0 V V V pF pF MHz dB VBEsat Cob C ib fT F IC = 100 µA; VCE = 1 0 V; RS = 1 kΩ; − f = 1.0k Hz