CHT3019ZPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Switching Transistor V OLTAGE 80 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. C HT3019ZPT CURRENT 1 Ampere FEATURE * Suitable for high packing density. * High saturation current capability. * Voltage controlled small signal switch. SC-73/SOT-223 1.65+0.15 6.50+0.20 3.00+0.10 0.90+0.05 2.0+0.3 CONSTRUCTION 3.5+0.2 7.0+0.3 * NPN Switching Transistor 0.9+0.2 0.70+0.10 2.0+0.3 MARKING BCP56 0.70+0.10 2.30+0.1 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT (1) B C (3) 2 Emitter 3 Collector ( Heat Sink ) E(2) Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. 120 80 7.0 1000 1500 2.0 +150 150 +150 V V V UNIT mA mA W °C °C °C −65 − −65 RATING CHARACTERISTIC CURVES ( CHT3019ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 90 V IC = 0; VEB = 5 V IC = 0.1 mA; V CE = 10V IC = 1.0 mA; VCE = 10V IC = 150 mA; VCE =10V IC = 500 mA; VCE = 10V IC = 1.0 A; VCE = 10V − − 50 90 100 50 15 MIN. MAX. 10 10 − − 300 − − UNIT nA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W VCEsat collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise Þgure IC = 1 50 mA; IB = 15 m A -5 IC = 00 mA; IB = 50 m A IC =1 50 mA; IB =15 mA IE = ie = 0; VCB = 1 0 V; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 50 mA; VCE = 1 0 V; f = 1.0 MHz − − − − − 100 0.2 0.5 1.1 12 60 − 4.0 V V V pF pF MHz dB VBEsat Cob C ib fT F IC = 100 µA; VCE = 1 0 V; RS = 1 kΩ; − f = 1.0k Hz