CHT3055ZPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN SILICON Transistor V OLTAGE 60 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. C HT3055ZPT CURRENT 6 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. * High saturation current capability. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION *NPN SILICON Transistor 0.70+0.10 3.5+0.2 7.0+0.3 0.9+0.2 2.0+0.3 MARKING * ZDN 0.70+0.10 2.30+0.1 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT (1) B C (3) 2 Emitter 3 Collector ( Heat Sink ) E(2) Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Base Current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. 100 60 7.0 6.0 3.0 2 +150 150 +150 V V UNIT V A A W °C °C °C −65 − −65 RATING CHARACTERISTIC CURVES ( CHT3055ZPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICEO IEBO hFE PARAMETER collector cut-off current emitter cut-off current VCE=30 V VEB=7.0V CONDITIONS − − 20 5.0 MIN. MAX. 700 5.0 70 − UNIT uA mA DC current gain IC = 4.0A; VCE = 4V IC =6.0A; VCE = 4V VCEsat collector-emitter saturation voltage base-emitter saturation voltage transition frequency IC=4.0A,IB=400mA − 1.1 V VBEON fT IC = 4.0A; VCE = 4V IC = 500mA; VCE = 1 0 V; f = 1.0MHz − 2.5 1.5 − V MHz