CHT5401PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor V OLTAGE 150 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. C HT5401PT CURRENT 0.2 Ampere FEATURE .041 (1.05) .033 (0.85) SOT-23 * Small flat package. ( SOT-23 ) * Suitable for high packing density. .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) CONSTRUCTION * PNP transistors in one package. (1) (3) (2) MARKING * VT .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1) B (3) C .045 (1.15) .033 (0.85) (2) E .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − −65 − −65 MIN. MAX. -160 -150 -5.0 -200 225 +150 150 +150 UNIT V V V mA mW °C °C °C 2004-11 RATING CHARACTERISTIC CURVES ( CHT5401PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = -120 V VEB=3.0V IC = -1.0 mA; V CE = -5V IC = -10mA; VCE = -5V IC = -50 mA; VCE = -5V − − 50 60 50 − − 240 MIN. MAX. -50 -50 UNIT nA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 420 UNIT K/W VCEsat collector-emitter saturation voltage base-emitter saturation voltage collector capacitance IC = -10 mA; IB = -1.0 m A --5 IC = 0 mA; IB = -5.0 m A IC =-10 mA; IB=-1.0mA --5 IC = 0 mA; IB = -5.0 m A − − − − -0.2 -0.5 -1.0 -1.0 6.0 200 300 8.0 V V V V pF VBEsat Cob hfe fT F IE = ie = 0; VCB = - 1 0 V; f = 1 MHz − VCE=-10V,IC=-1.0mA,f=1.0KHz 40 100 − transition frequency noise Þgure IC =- 50 mA; VCE = 1 0 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 1 0 Ω; f =10Hz to 15.7KHz MHz dB