CHT5564XPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Epitaxial Transistor V OLTAGE 15 Volts APPLICATION * DC to DC relay drivers,lamp drivers C HT5564XPT CURRENT 6 Amperes FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=0.18V(IC/IB=1.5A/0.03A) * PC= 1.3W (mounted on ceramic substrate). * High saturation current capability. 4.6MAX. 1.7MAX. 1.6MAX. 0.4+0.05 SC-62/SOT-89 2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 * NPN Cilicon Transistor MARKING 1 1 Base 2 3 CIRCUIT 2 Collector ( Heat Sink ) 3 Emitter 0.8MIN. 4.6MAX. CONSTRUCTION 1 B 2 C 3 E Dimensions in millimeters SC-62/SOT-89 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA ≤ 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 20 15 5 6 9 0.6 1.3 +150 +150 +150 UNITS Volts Volts Volts Amps Amps Amps W o C C C o o Note 1. Transistor mounted on ceramic substrate by 40mmX40mmx0.7mm. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2006-02 RATING CHARACTERISTIC CURVES ( CHT5564XPT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=12V IC=0; VEB=4V VCE=0.5V; Note 1 IC=5A SYMBOL ICBO ICEO MIN. TYPE MAX. 0.1 0.1 UNITS uA uA DC Current Gain hFE 250 - - Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Transition Frequency Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. IC=1.5A; IB=0.03A IC=1.5A; IB=0.03A IE=ie=0; VCB=10V; f=1MHz IC=-0.5A; VCE=2.0V; f=100MHz VCEsat VBEsat CC fT - 0.12 0.85 23 380 0.18 1.2 - Volts Volts pF MHz