CHT807N1PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. C HT807N1PT CURRENT 0.5 Ampere FEATURE * Surface mount package. (FBPT-923) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. FBPT-923 0.5±0.05 1.0±0.05 0.37(REF.) 1.0±0.05 0.25(REF.) 0.05±0.04 0.68±0.05 0.42±0.05 CONSTRUCTION * PNP Silicon Transistor * Epitaxial planner type CIRCUIT (1) B C (3) 0.3±0.05 0.26±0.05 E (2) Dimensions in millimeters FBPT-923 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VCES VEBO IC ICM IEM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current (DC) peak collector current peak emitter current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open emitter open collector − − − − − − − − −65 − −65 MIN. MAX. -45 -45 -5 −5 -500 -1000 -1000 100 +150 150 +150 UNIT V V V V mA mA mA mW °C °C °C 2006-07 RATING CHARACTERISTIC ( CHT807N1PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on ceramic substrate 0.7mm ; 2.5cm ares. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICES IEBO VCEsat hFE VBE CCBO fT PARAMETER collector-emitter cut-off current emitter-base cut-off current collector-emitter saturation volt DC current gainI base-emitter voltage collector-base capacitance transition frequency CONDITIONS VCE = 45 V VCB = 25 V; Tj = 150 OC VEB = - 4 V IC =- 500 mA ; I B = -50 mA IC = -100 mA; VCE= -1.0V IC = -300 mA; VCE= -1.0V IC = -300 mA; VCE= -1.0V VCB = 1 0V ; f = 1 MHz IC = 10 mA; VCE = 5 V ; f = 50 MHz − 100 − − − − 100 60 MIN. MAX. -100 -50 -100 -700 600 − -1.2 12 − V pF MHz UNIT nA uA nA mV 2 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 430 UNIT ° C/W Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600 RATING CHARACTERISTIC CURVES ( CHT807N1PT ) Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA) VCB = 25V 400 mW 5 10 V CBO nA 10 4 300 P tot 250 10 200 3 max 150 10 2 typ 100 10 50 1 0 0 20 40 60 80 100 120 OC 150 10 0 0 50 100 oC 150 TS TA Permissible Pulse Load R thJS = f (t p ) Permissible Pulse Load Ptotmax / PtotDC = f (t p ) 10 3 K/W 10 3 Ptotmax / PtotDC 10 2 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 R thJS 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp RATING CHARACTERISTIC CURVES ( CHT807N1PT ) Collector-emitter saturation voltage IC = f (VCEsat ), h FE = 10 10 3 Base-emitter saturation voltage IC = f (VBEsat ), h FE = 10 10 3 ΙC mA 150 oC 25 oC -50 oC ΙC mA 150 oC 25 oC -50 oC 10 2 5 10 2 5 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 0.2 0.4 0.6 V 0.8 10 -1 0 1.0 2.0 3.0 V 4.0 VCEsat V BEsat DC current gain hFE = f (IC ) VCE = 5V 10 3 h FE 5 100 oC 25 oC -50 oC 10 5 2 Transition frequency fT = f (IC) VCE = 5V 10 3 fT MHz 5 10 2 10 1 5 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 10 1 10 0 10 1 3 10 2 mA 10 ΙC ΙC