CHT817WPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. C HT817WPT CURRENT 0.5 Ampere FEATURE * Surface mount package. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. (2) (3) SC-70/SOT-323 1.3±0.1 0.3±0.1 0.65 2.0±0.2 0.65 1.25±0.1 (1) 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT 1 3 2 Dimensions in millimeters SC-70/SOT-323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VCES VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-9 PARAMETER collector-base voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open emitter open collector − − − − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. 50 45 5 5 500 1000 200 200 +150 150 +150 V V V V UNIT mA mA mA mW °C °C °C −65 − −65 RATING CHARACTERISTIC ( CHT817WPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE VCEsat VBEsat Cc fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600 PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency CONDITIONS IE = 0; VCB = 25 V IC = 0; VCB = 25 V; TA = 150 OC IC = 0; VEB = 4 V IC = 100 mA; VCE =1.0V; note 1 IC = 500 mA ; I B = 50 mA IC = 500 mA; IB = 50mA IE = ie = 0; VCB = 1 0V ; f = 1 MHz IC = 50 mA; VCE = 5 V ; f = 100 MHz − 170 − − − 100 − MIN. MAX. 100 50 100 600 700 1.2 6.0 − mV V pF MHz UNIT nA uA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 105 UNIT K/W RATING CHARACTERISTIC CURVES ( CHT817WPT ) Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA) VCB = 25V 400 mW 5 10 V CBO nA 10 4 300 P tot 250 10 200 3 max 150 10 2 typ 100 10 50 1 0 0 20 40 60 80 100 120 OC 150 10 0 0 50 100 oC 150 TS TA Permissible Pulse Load R thJS = f (t p ) Permissible Pulse Load Ptotmax / PtotDC = f (t p ) 10 3 K/W 10 3 Ptotmax / PtotDC 10 2 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 R thJS 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp RATING CHARACTERISTIC CURVES ( CHT817WPT ) Collector-emitter saturation voltage IC = f (VCEsat ), h FE = 10 10 3 Base-emitter saturation voltage IC = f (VBEsat ), h FE = 10 10 3 ΙC mA 150 oC 25 oC -50 oC ΙC mA 150 oC 25 oC -50 oC 10 2 5 10 2 5 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 0.2 0.4 0.6 V 0.8 10 -1 0 1.0 2.0 3.0 V 4.0 VCEsat V BEsat DC current gain hFE = f (IC ) VCE = 5V 10 3 h FE 5 100 oC 25 oC -50 oC 10 5 2 Transition frequency fT = f (IC) VCE = 5V 10 3 fT MHz 5 10 2 10 1 5 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 10 1 10 0 10 1 3 10 2 mA 10 ΙC ΙC