CHT847BVPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 45 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. C HT847BVPT CURRENT 0.1 Ampere FEATURE * Small surface mounting type. (SOT-563) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. 0.9~1.1 (1) (5) SOT-563 0.50 0.50 (4) 1.5~1.7 CONSTRUCTION * Two NPN transistors in one package. 0.15~0.3 (3) 1.1~1.3 MARKING * V3 0.5~0.6 0.09~0.18 C1 B2 5 E2 4 CIRCUIT 6 1.5~1.7 TR2 TR1 1 E1 2 B1 3 C2 Dimensions in millimeters SOT-563 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL V CBO V CEO VEBO IC PC Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) CONDITIONS open emitter open base open collector 50 45 6 0.1 UNIT V V V A mW °C °C 2004-07 Collector power dissipation stor age temperature junction temperature 150 −55~+150 +150 RATING CHARACTERISTIC ( CHT847BVPT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO BVCBO BVCEO BVEBO hFE VCEsat VBEsat Cib Cob fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. CONDITIONS IE = 0; VCB = 30 V collector cut-off current IC = 0; VCB = 30 V; TA = 150 OC collector-base breakdown voltage IC =50uA collector-emitter breakdown voltage IC =1mA IE =50uA emitter-base breakdown voltage VCE /I C =5V/2 mA current transfer ratio DC IC = 10 mA ; I B = 0.5 mA collector-emitter saturation IC = 100 mA ; I B = 5 mA voltage base-emitter satur ation v oltage emitter input capacitance collector output capacitance transition frequency IC = 10 mA;IB = 0.5 mA IC = 0; VCB = 0 .5V ; f = 1 MH z IE = 0; VCB = - 10V ; f = 1 MH z IE = -20 mA; VCE = 5 V ; f = 100 MHz PARAMETER MIN. − − 50 45 6 200 − − − − − − Typ. − − − − − − − − 700 8 3 200 UNIT MAX. 15 nA 5 uA V − V − − V 450 100 mV 300 − − − − mV mV pF pF MHz RATING CHARACTERISTIC CURVES ( CHT847BVPT) fig1.Griunded emitter output characteristics COLLECTOR CURRENT : Ic (mA) 100 600 500 400 50 300 200 100 0 0 Ta=25 C 10 COLLECTOR-EMITTERVOLTAGE : VCE( V) 5 IB=0uA O COLLECTOR EMITTER SATURATION fig2.Co ll ec t o r-Em it t er S at u ra t i on Vo l t ag e vs Co l lec t o r Cu r r ent VOLTAGE : VCE(Sat)(V) 0.3 Ta=25 C IC/IB=10 O 0.2 0.1 0 1.0 10 100 I C - COL L ECTOR CURRENT (m A) 1000 RATING CHARACTERISTIC CURVES ( CHT847BVPT) fig3.DC current gain VS. collector current ( 1 ) 1000 DC CURRENT GAIN : hFE Ta=25 C DC CURRENT GAIN : hFE O f ig4.DC current gain VS. collector current ( 2 ) 1000 Ta=125 C O 25 O C -55 C O Ta=25 C O VCE=10V 100 1V 100 10 0.1 1 10 100 I C - COL L ECTO CURRENT (m A) 1000 10 0.1 1 10 100 1000 I C - COLL ECTOR CURRENT (mA ) BASE EMITTER SATURATION VOLTAGE : VBE(Sat)(V) fig5.AC current gain VS. collector current 1000 AC CURRENT GAIN : hFE Ta=25 C VCE=10V f=1KHZ O fig6.Base-emitter saturation voltage VS. collector current 1.8 1.6 1.2 Ta=25 C IC/IB=10 O 100 0.8 0.4 0 1.0 10 100 1000 I C - COL L ECTO CURRENT (m A) 10 0.1 1 10 100 1000 I C - COL L ECTO CURRENT (m A) BASE EMITTER VOLTAGE : VBE(ON)(V) fig7.Grounded emitter propagation characteristics 1.8 1.6 1.2 TURN ON TIME : ton(ns) Ta=25 C VCE=10V O fig8.Turn-on time VS. collector current 10 00 Ta=25 C IC/IB=10 O 0.8 10 0 VCC=30V 10V 10 1 10 10 0 I C - COLLEC TOR CURRENT (mA ) 0.4 0 1 10 10 0 I C - COLLEC TOR CURRENT (mA ) 1000 1000 RATING CHARACTERISTIC CURVES ( CHT847BVPT) fig9.Rise time VS. collector current 500 Ta=25 C Vcc=30V IC/IB=10 O fig10.Fall time VS. collector current 500 FALL TIME : tr(ns) Ta=25 C Vcc=30V O RISE TIME : tr(ns) 100 100 10 5 1.0 10 1.0 100 10 I C - COL L ECTO CURRENT (m A) 1000 100 10 I C - COL L ECTO CURRENT (m A) 1000 fig11.Input / output capacitance VS. voltage 100 Ta=25 C f=1MHZ O CAPAITANCE(pF) Cib 10 Cob 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100