CHT848BWPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 30 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. C HT848BWPT CURRENT 0.1 Ampere FEATURE * Surface mount package. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. (2) (3) SC-70/SOT-323 1.3±0.1 0.3±0.1 0.65 2.0±0.2 0.65 (1) MARKING * HFE(P):RN * HFE(Q):RO * HFE(Y):RP 1.25±0.1 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT 1 3 2 Dimensions in millimeters SC-70/SOT-323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL V CBO V CEO VEBO IC PC PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Collector power dissipation Note2 Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. 2. When mounted on a 7X5X0.6mm ceramic board. stor age temperature junction temperature CONDITIONS open emitter open base open collector − − − − − − −65 − MIN. MAX. 30 30 5 0.1 0.2 W 0.3 +150 150 °C °C V V V A UNIT 2004-10 RATING CHARACTERISTIC ( CHT848BWPT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO hFE VBEsat VCEsat PARAMETER collector cut-off current DC current transfer ratio collector-base saturation voltage collector-emitter saturation voltage base-emitter satur ation v oltage emitter input capacitance collector output capacitance transition frequency noise figure CONDITIONS IE = 0; VCB = 30 V VCE /I C =5V/2 mA IC = 10 mA ; I B = 0.5 mA IC = 100 mA ; I B = 5 mA IC = 10 mA ; I B = 0.5 mA IC = 100 mA ; I B = 5 mA IC = 2 mA;VCE= 5.0 V IC = 10mA;VCE= 5.0 V IC = 0; VCB = 0 .5V ; f = 1 MH z IE = 0; VCB = 1 0V ; f = 1 MH z VCE=5V , IC=200uA , F=1KHz , RG=2K MIN. − 110 − − − − 0.58 − − − − Typ. − − 700 900 90 200 0.66 − 9 3.5 300 2 MAX. 15 800 − − 250 600 0.70 0.72 − 6 − 10 UNIT nA mV mV mV mV V V pF pF MHz dB VBE(on) Cib Cob fT NF Note IE = 10 mA; VCE = 5 V ; f = 100 MHz − 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. hFE Classification P:110 to 220 Q: 200 to 450, Y: 420 to 800 RATING CHARACTERISTIC CURVES ( CHT848BWPT) fig1.Static Characteristic 100 10000 fig2.DC current Gain VCE = 5V IC[mA], COLLECTOR CURRENT 80 IB = 400µA IB = 350µA 60 IB = 250µA IB = 200µA hFE, DC CURRENT GAIN IB = 300µA 1000 40 IB = 150µA IB = 100µA 100 20 IB = 50µA 0 0 4 8 12 16 20 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT RATING CHARACTERISTIC CURVES ( CHT848BWPT) fig3.Base-Emitter Stauration Voltage Collector-Emitter Stauration Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10000 100 fig4.Base-Emitter On Voltage IC = 10 IB 1000 V BE(sat) IC[mA], COLLECTOR CURRENT VCE = 2V 10 100 1 V CE(sat) 10 1 10 100 1000 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE fig5.Collector Output Capacitance fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 100 fig6.Current Gain Bandwidth Product 1000 f=1MHz VCE =5V Cob[pF], CAPACITANCE 10 100 1 10 0.1 1 10 100 1000 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT