CHT84N1PT

CHENMKO ENTERPRISE CO.,LTD C HT84N1PT SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor V OLTAGE 50 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CURRENT 0.13 Ampere FEATURE * Small surface mounting type. (FBPT-923) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. 0.37(REF.) 0.5±0.05 1.0±0.05 FBPT-923 1.0±0.05 0.25(REF.) CONSTRUCTION * P-Channel Enhancement 0.05±0.04 0.68±0.05 0.42±0.05 CIRCUIT 1G 3 D 0.3±0.05 0.26±0.05 2S Dimensions in millimeters FBPT-923 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted CHT84N1PT Units VDSS Drain-Source Voltage -50 V VGSS Gate-Source Voltage - Continuous ±20 -0.13 V ID Maximum Drain Current - Continuous A PD Maximum Power Dissipation 100 -55 to 150 mW TJ,TSTG Operating and Storage Temperature Range °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 417 °C/W 2006-07 RATING CHARACTERISTIC CURVES ( CHT84N1PT ) Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = -50 V, VGS = 0 V VDS = -25 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V -50 -15 -100 10 -10 V µA nA nA nA Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 1) VGS(th) RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 1.0 µA -0.8 -2.0 10 V Static Drain-Source On-Resistance VGS = -5.0 V, ID = 0.1 A Forward Transconductance VDS = -25 V , ID = 1000 m A 0.05 Ω S DYNAMIC CHARACTERISTICS Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time VDS = -25 V, VGS = 0 V, f = 1.0 MHz 45 25 12 10 18 pF VDD = -30 V ID = -270 mA, VGS = -10 V, RGEN = 50 Ω nS RATING CHARACTERISTIC CURVES ( CHT84N1PT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics 600 15 Figure 2. On-Resistance Variation with Temperature I D , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE 500 R DS(ON) , NORMALIZED VGS = 5V 400 12 4.5V 9.0 V GS =-10V I D = - 130m A 300 200 3.5V 3.0V 6.0 100 3.0 2.5V 0 0 1 2 3 4 5 V DS , D RAIN-SOURCE VOLTAGE (V) 0 -5 0 -2 5 0 25 50 75 100 T J , JUN CTION T EMPERATURE (°C) 125 150