CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor
V OLTAGE 50 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
C HT84WPT
CURRENT 0.13 Ampere
FEATURE
* Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch.
(3)
SC-70/SOT-323
(2)
1.3±0.1 0.3±0.1
0.65 2.0±0.2 0.65
1.25±0.1
(1)
CONSTRUCTION
* P-Channel Enhancement
MARKING
* AW
D
0.05~0.2 0.1Min.
0.8~1.1 0~0.1 2.0~2.45
CIRCUIT
1G
S
3
2
TA = 25°C unless otherwise noted
Dimensions in millimeters
SC-70/SOT-323
Absolute Maximum Ratings
Symbol Parameter
CHT84WPT
Units
VDSS
Drain-Source Voltage
-50
V
VGSS
Gate-Source Voltage - Continuous
±20
-0.13
V
ID
Maximum Drain Current - Continuous
A
PD
Maximum Power Dissipation
200 -55 to 150
mW
TJ,TSTG
Operating and Storage Temperature Range
°C
Thermal characteristics
RθJA Thermal Resistance, Junction-to-Ambient 625 °C/W
2004-03
RATING CHARACTERISTIC CURVES ( CHT84WPT )
Electrical Characteristics T
Symbol Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS IGSSF IGSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
VGS = 0 V, ID = -250 µA VDS = -50 V, VGS = 0 V VDS = -25 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
-50
-75 -15 -100 10 -10
V µA nA nA nA
Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
ON CHARACTERISTICS
(Note 1)
VGS(th) RDS(ON) gFS
Gate Threshold Voltage
VDS = VGS, ID = 1.0 mA
-0.8
-1.6 6
-2.0 10
V
Static Drain-Source On-Resistance VGS = -5.0 V, ID = 0.1 A Forward Transconductance VDS = -25 V , ID = 100 m A 0.05
Ω
S
DYNAMIC CHARACTERISTICS
Ciss Coss Crss ton toff
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time
VDS = -25 V, VGS = 0 V, f = 1.0 MHz
45 25 12 10 18
pF
VDD = -30 V ID = -270 mA, VGS = -10 V, RGEN = 50 Ω
nS
RATING CHARACTERISTIC CURVES ( CHT84WPT )
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
600 15
Figure 2. On-Resistance Variation with Temperature
I D , DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
500 R DS(ON) , NORMALIZED
VGS = 5V
400
12
4.5V
9.0
V GS =-10V I D = - 130m A
300
200
3.5V 3.0V
6.0
100
3.0
2.5V
0 0 1 2 3 4 5 V DS , D RAIN-SOURCE VOLTAGE (V)
0 -5 0
-2 5
0 25 50 75 100 T J , JUN CTION T EMPERATURE (°C)
125
150
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