CHTA42ZPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN SILICON Transistor V OLTAGE 300 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. C HTA42ZPT CURRENT 0.5 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION 3.5+0.2 7.0+0.3 *NPN SILICON Transistor 0.9+0.2 MARKING ZHN 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT (1) B C (3) 2 Emitter 3 Collector ( Heat Sink ) E(2) Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. 300 300 6 500 2 +150 150 +150 UNIT V V V mA W °C °C °C −65 − −65 RATING CHARACTERISTIC CURVES ( CHTA42ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = 200 V VEB = 6 . 0 V IC = 1 mA; VCE = 10V IC = 10 mA; VCE =10V IC = 30 mA; VCE =10V IC=20mA, IB=2.0mA IC=20mA, IB=2.0mA IC = 10 mA; VCE=20V ; f = 100MHz VCB=20V, IE=0, f=1.0MHZ − − 25 40 40 − − 50 − MIN. MAX. 100 100 − UNIT nA nA − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 104 UNIT K/W VCE(sat) VBE(sat) fT Cob collector-emitter saturation voltage base-emitter saturation voltage transition frequency collector capacitance 0.5 0.9 − 3.0 V V pF