CHTA64ZPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor V OLTAGE 30 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. C HTA64ZPT CURRENT 1 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION 3.5+0.2 7.0+0.3 *PNP SILICON Transistor 0.9+0.2 MARKING * ZGP 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT (1) B C (3) 2 Emitter 3 Collector ( Heat Sink ) E (2) Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. -30 -30 -10 -1000 2 +150 150 +150 V V V UNIT mA W °C °C °C −65 − −65 RATING CHARACTERISTIC CURVES ( CHTA64ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE VCE(sat) VBE(ON) fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage transition frequency CONDITIONS VCB = -30 V VEB = - 1 0 V IC = -10 mA; VCE = -5V IC = -100 mA; VCE =-5V IC = -1 00 mA; IB = -0.1 m A I C = -1 00 mA; VCE=5-V IC = -10 mA; VCE = 5 V; f = 100MHz − − 10000 20000 − − 125 MIN. MAX. -100 -100 − − -1.5 -2 − V V MHz UNIT nA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W