CHUMB8PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HUMB8PT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Two CHDTA114T chips in a package. Built in bias resistor(R1=10kΩ, Typ. ) (1) (6) SC-88/SOT-363 1.2~1.4 0.65 0.65 2.0~2.2 (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 R1 4 R1 1 3 Dimensions in millimeters SC-88/SOT-363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC PC TSTG TJ Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-04 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Collector Power dissipation Storage temperature Junction temperature CONDITIONS -50 -50 -5 VALUE V V V mA UNIT -100 Tamb ≤ 25 OC, Note 1 150 −55 ∼ +150 150 mW O C O C RATING CHARACTERISTIC ( CHUMB8PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency IE=5mA, VCE= -10.0V f=100MHz = CONDITIONS IC= -50uA IE= -50uA IC= -10mA; IB= -1mA VCB= -50V VEB= -4V IC= -1mA; VCE= -5.0V M IN. -50.0 -50.0 -5.0 − − − 100 7 − − − − − − − 250 10 250 TY P . − − − -0.3 -0.5 -0.5 600 13 − KΩ MHz MAX. V V V V uA uA UNIT Collector-Emitter breakdown voltage IC= -1mA Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHUMB8PT ) Typical Electrical Characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 DC current gain vs. collector current 1k 500 DC CURRENT GAIN : hFE Fig.2 Collector-emitter saturation voltage vs. collector current -1 lC/lB=20 -500m -200m -100m -50m -20m -10m -5m -2m -1m -100u -500u -1m -5m -10m -50m -100m 100OC 25OC -40 OC VCE=-5V 200 100 50 20 10 5 2 1 -100u −1m -5m -10m -50m -100m Ta=100 C 25OC -40OC O COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)