CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT Power Management (Dual Transistor)
Tr1:VOLTAGE 50 Volts CURRENT 150 mAmpere DTr2:VOLTAGE 50 Volts CURRENT 100 m Ampere
APPLICATION
* Power management circuit
C HUMF17PT
FEATURE
* Small surface mounting type. (SC-88/SOT-363) * Power switching circuit in a single package. * Mounting cost and area can be cut in half. * Both the 2SA1774 & CHDTC123E in one package. * Built in bias resistor(R1=2.2kΩ, Typ. )
SC-88/SOT-363
(1)
(6)
1.2~1.4
0.65 0.65
2.0~2.2
(4) 0.15~0.35 (3) 1.15~1.35
0.08~0.15 0.1 Min.
0.8~1.1 0~0.1 2.15~2.45
CIRCUIT
6 R1 Tr1 1 R2 DTr2
4
3
Dimensions in millimeters
SC-88/SOT-363
2SA1774 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Output current Total power dissipation Storage temperature Junction temperature NOTE.1 CONDITIONS − − − − − −55 − MIN. MAX. -60 -50 -6 -150 150 +150 150
O
UNIT V V V mA mW C C
PC TSTG TJ
O
Note 1. 120mW per element must not be exceeded.
CHDTC123E LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PC TSTG Power dissipation Storage temperature Junction temperature NOTE.1 NOTE.2 PARAMETER Supply voltage Input voltage CONDITIONS − -10 − − − −55 − MIN. MAX. 50 +20 100 mA 100 150 +150 150 mW
O
UNIT V V
C
TJ Note
O
C
1. Characteristics of built-in transistor. 2. Each terminal mounter on a recommended land.
2SA1774 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS IC=-50uA IC=-1mA IE=-50uA VCB=-60V VEB=-6V VCE=-6V,IC=-1mA IC=-50mA,IB=-5mA VCB=-12V,IE=0mA,f=1MHZ VCE=-12V,IE=2mA,f=100MHZ MIN. -60 -50 -6 − − 120 − − − TYP. − − − − − − − 4 140 − − − − -100 -100 560 -500 5 MAX. V V V nA nA − mV pF MHz UNIT
BVCEO Collector-emitter breakdown voltage BVCBO Collector-base breakdown voltage BVEBO ICBO IEBO hFE VCE(sat) Cob fT Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency
Note 1.Pulse test: tp≤300uS; δ≤0.02.
CHDTC123E CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) G1 R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=-5mA, VCE=10.0V f=100MHz = CONDITIONS IO=100uA; VCC=5.0V IO=20mA; VO=0.3V IO=10mA; II=0.5mA VI=5V VI=0V; VCC=50V IO=20mA; VO=5.0V − − − − 20 1.54 0.8 − MIN. 0.5 − − 0.1 − − − 2.2 1.0 250 TYP. − 3.0 0.3 3.8 0.5 − 2.86 1.2 − MAX. V V V mA uA − KΩ − MHz UNIT
Note Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHUMF17PT )
2SA1774 Typical Electrical Characteristics
Fig.1
−50
COLLECTOR CURRENT : Ic (mA)
Grounded emitter propagation characteristics
Ta=100˚C 25˚C −40˚C
VCE=−6V
COLLECTOR CURRENT : IC (mA)
Fig.2
−10
Grounded emitter output characteristics (1)
−35.0
COLLECTOR CURRENT : IC (mA)
Fig.3
−100
Grounded emitter output characteristics (2)
Ta=25˚C
−20 −10 −5 −2 −1 −0.5 −0.2 −0.1
−31.5
Ta=25˚C
−8
−28.0
−80
−24.5
−6
−21.0
−60
−500 −450 −400 −350 −300
−250 −200
−17.5
−4
−14.0
−40
−150 −100
−10.5
−2
−7.0 −3.5µA
−20
−50µA
IB=0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (V)
0
−0.4
−0.8
−1.2
IB=0 −1.6 −2.0
0
−1
−2
−3
−4
−5
COLLECTOR TO MITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.4 Collector-emitter saturation voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−1
500
Fig.5 DC current gain vs. collector current
Ta=100˚C
25˚C
Fig. 6 Gain bandwidth product vs. emitter current
1000
lC/lB=10
DC CURRENT GAIN : hFE
−0.5
TRANSITION FREQUENCY : fT (MHz)
Ta=25˚C VCE=−12V
500
200
−40˚C
−0.2
Ta=100˚C 25˚C −40˚C
100
200
−0.1
100
50
−0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
−0.2 −0.5 −1 −2
VCE=−6V −5 −10 −20 −50 −100
50 0.5
1 2 5 10
20
50
100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
RATING CHARACTERISTIC CURVES ( CHUMF17PT )
CHDTC123E Typical Electrical Characteristics
Fig.1 Input voltage vs. output current (ON characteristics)
100
VO=0.3V
Fig.2 Output current vs. input voltage (OFF characteristics)
10m 5m
2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0
Ta=100°C 25°C −40°C
INPUT VOLTAGE : VI(on) (V)
50 20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Ta=−40°C 25°C 100°C
OUTPUT CURRENT : Io (A)
VCC=5V
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(off) (V)
Fig.3 DC current gain vs. output current
1k
Fig.4 Output voltage vs. output current
1
DC CURRENT GAIN : G
500 200 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m
Ta=100°C 25°C −40°C
OUTPUT VOLTAGE : VO(on) (V)
VO=5V
lO/lI=20
500m 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Ta=100°C 25°C −40°C
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
OUTPUT CURRENT : IO (A)
很抱歉,暂时无法提供与“CHUMF17PT”相匹配的价格&库存,您可以联系我们找货
免费人工找货