CHUMF24PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Power Management (Dual Transistor) Tr1:VOLTAGE 50 V olts CURRENT 150 mAmpere DTr2:VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Power management circuit C HUMF24PT FEATURE * Small surface mounting type. (SC-88/SOT-363) * Power switching circuit in a single package. * Mounting cost and area can be cut in half. * Both the 2SC4617 & CHDTC114E in one package. * Built in bias resistor(R1=10kΩ, Typ. ) SC-88/SOT-363 (1) (6) 1.2~1.4 0.65 0.65 2.0~2.2 (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 R1 Tr1 1 R2 DTr2 4 3 D imensions in millimeters SC-88/SOT-363 2SC4617 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC PC TSTG TJ PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Output current Total power dissipation Storage temperature Junction temperature NOTE.1 CONDITIONS − − − − − −55 − MIN. MAX. 60 50 7 150 150 +150 150 O UNIT V V V mA mW C C O Note 1. 120mW per element must not be exceeded. CHDTC114E LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PC TSTG Power dissipation Storage temperature Junction temperature NOTE.1 NOTE.2 PARAMETER Supply voltage Input voltage CONDITIONS − -10 − − − −55 − MIN. MAX. 50 +40 50 mA 100 150 +150 150 mW O UNIT V V C TJ Note O C 1. Characteristics of built-in transistor. 2. Each terminal mounter on a recommended land. 2SC4617 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS IC=50uA IC=1mA IE=50uA VCB=60V VEB=7V VCE=6V,IC=1mA IC=50mA,IB=5mA VCB=12V,IE=0mA,f=1MHZ VCE=12V,IE=-2mA,f=100MHZ MIN. 60 50 7 − − 180 − − − TYP. − − − − − − − 2 180 − − − 100 100 390 0.4 3.5 − MAX. V V V nA nA − V pF MHz UNIT BVCEO Collector-emitter breakdown voltage BVCBO Collector-base breakdown voltage BVEBO ICBO IEBO hFE VCE(sat) Cob fT Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Note 1.Pulse test: tp≤300uS; δ≤0.02. CHDTC114E CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) G1 R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=-5mA, VCE=10.0V f=100MHz = CONDITIONS IO=100uA; VCC=5.0V IO=10mA; VO=0.3V IO=10mA; II=0.5mA VI=5V VI=0V; VCC=50V IO=5mA; VO=5.0V − − − − 30 7 0.8 − MIN. 0.5 − − 0.1 − − − 10 1.0 250 TYP. − 3.0 0.3 0.88 0.5 − 13 1.2 − MAX. V V V mA uA − KΩ − MHz UNIT Note Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHUMF24PT ) 2SC4617 Typical Electrical Characteristics Fig.1 50 COLLECTOR CURRENT : IC(mA) Grounded emitter propagation characteristics VCE=6V Ta=100OC COLLECTOR CURRENT : IC(mA) Fig.2 100 Grounded emitter output characteristics (1) 0.50mA COLLECTOR CURRENT : IC(mA) Fig.3 10 Ta=25°C Grounded emitter output characteristics (2) 30µA 27µA 24µA 21µA Ta=25°C 20 10 5 80 mA 0.45 A 0.40m 0.35mA 8 0.30mA 25°C −55°C 60 0.25mA 0.20mA 6 18µA 15µA 12µA 9µA 6µA 3µA 2 1 40 0.15mA 0.10mA 4 0.5 25OC 55OC 20 0.05mA IB=0A 2 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE(V) 0 0.4 0.8 1.2 1.6 2.0 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE(V) COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.4 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Fig.5 DC current gain vs. collector current 0.5 IC/IB=50 TRANSITION FREQUENCY : fT(MHz) Fig. 6 Gain bandwidth product vs. emitter current 500 0.5 IC/IB=10 Ta=25°C VCE=6V DC CURRENT GAIN : hFE 0.2 Ta=100°C 25°C −55°C 0.2 0.1 Ta=100°C 25°C −55°C 0.1 0.05 200 0.05 0.02 100 0.02 0.01 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) EMITTER CURRENT : IE(mA) RATING CHARACTERISTIC CURVES ( CHUMF24PT ) CHDTC114E Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 50 VO=0.3V Fig.2 Output current vs. input voltage (OFF characteristics) 10m 5m OUTPUT CURRENT : Io (A) VCC=5V INPUT VOLTAGE : VI(on) (V) 20 10 5 2 1 500m 200m 100m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta =- 40OC 25OC = 100OC 2m 1m 500 200 100 50 20 10 5 2 1 0 Ta=100OC 25OC -40 OC 0.5 1.0 1.5 2.0 2.5 3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.3 DC current gain vs. output current 1k 500 OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI Fig.4 Output voltage vs. output current 1 500m lO/lI=20 Ta=100OC 25OC -40 OC VO =5V Ta=100 C 25OC -40OC O 200 100 50 20 10 5 2 1 100 200 200m 100m 50m 20m 10m 5m 2m 500 1m 2m 5m 10m 20m 50m100m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A)