HBM12PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT GLASS PASSIVATED H IGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * For surface mounted applications Low forward voltage, high current capability Low leakage current Metallurgically bonded construction Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Glass passivated junction * High temperature soldering guaranteed : 260oC/10 seconds at terminals 0.155 (3.94) 0.130 (3.30) (1) H BM11PT THRU HBM18PT SMB 0.083 (2.11) 0.077 (1.96) (2) 0.190 (4.75) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) MECHANICAL DATA Case: JEDEC SMB molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Weight: 0.003 ounces, 0.093 gram 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 HZ, resistive or inductive load. For capacitive load, derate current by 20%. 0.220 (5.59) 0.205 (5.21) Dimensions in inches and (millimeters) SMB UNITS Volts Volts Volts Amps MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TL = 110 C Peak Forward Surge Current 8.3 ms single half sine-wave IFSM superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range CJ TJ, TSTG 15 -65 to +150 12 pF o o SYMBOL VRRM VRMS VDC IO HBM11PT HBM12PT HBM13PT HBM14PT HBM15PT HBM16PT HBM17PT HBM18PT 50 35 50 100 70 100 200 140 200 300 210 300 1.0 400 280 400 600 420 600 800 560 800 1000 700 1000 30 Amps C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 1.0 A DC Maximum DC Reverse Current at Rated DC Blocking Voltage at TA = 25oC Maximum Full Load Reverse Current Average, Full Cycle at TA = 55oC Maximum Reverse Recovery Time (Note 2) NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts 2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A SYMBOL VF HBM11PT HBM12PT HBM13PT HBM14PT HBM15PT HBM16PT HBM17PT HBM18PT UNITS Volts uAmps uAmps 1.0 1.3 5.0 1.5 1.7 IR 100 trr 50 70 nSec 2002-5 RATING CHARACTERISTIC CURVES ( HBM11PT THRU HBM18PT ) 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (-) 0 PULSE GENERATOR (NOTE 2) -0.25A AVERAGE FORWARD CURRENT, ( A ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 1.5 (+) 25 Vdc (approx) (-) D.U.T 1.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A 0.5 NOTES: 1. Rise Time = 7 ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10 ns max. Source Impedlance= 50 ohms. 1cm SET TIME BASE FOR 10/20 nS/cm 0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE ( OC ) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT, ( A ) INSTANTANEOUS REVERSE CURRENT, (uA) 10 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 13P T BM M1 4PT HB M1 TJ =100oC 1.0 TJ =25oC 0.1 .1 .01 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % ) .001 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, ( V ) 1.8 FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, ( A ) 35 JUNCTION CAPACITANCE, ( pF ) 30 25 20 15 10 5 0 1 2 5 10 20 NUMBER OF CYCLES AT 60 Hz 50 100 8.3ms Single Half Sine-Wave (JEDEC Method) FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, ( V ) 40 100 TJ =25oC HBM1 HBM 11PT ~HBM 6PT~H BM18P HB TJ =25oC 15PT T HB M1 7P 10 HB T~ TJ =125oC ~H M1 1.0 1PT ~H HB Pulse Width = 300uS 1% Duty Cycle 15P T BM 6P M1 8P T T