MMBD4448WPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SWITCHING DIODE ARRAY VOLTAGE 80 Volts CURRENT 250 mAmpere APPLICATION * Fast high s peed switching MMBD4448WPT FEATURE * Small surface mounting type. (SC-70/SOT-323) * High speed. (TRR=4.0nSec Max.) * Fast Switching Speed. * Ultra-Small Surface Mount Package. * For General Purpose Switching Applications. * High Conductance. 1.3±0.1 0.3±0.1 1.25±0.1 (2) SC-70/SOT-323 (3) (1) 0.65 2.0±0.2 0.65 CONSTRUCTION * Silicon epitaxial planar MARKING * WD 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT (2) (1) (3) Dimensions in millimeters SC-70/SOT-323 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Non-Repetitive Peak Reverse Voltage Maximum Repetitive Peak Reverse Voltage Maximum Working Peak Reverse Voltage Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Average Forward Rectified Current Repetitive Peak Forward Current Peak Forward Surge Current at 1uSec. Total Capacitance Maximum Reverse Recovery Time Maximum Thermal Resistance Maximum Operating and Storage Temperaturd Range o SYMBOL VRM VRRM VRWM VDC VRMS IO IFRM @1Sec @1.0uSec IFSM CT trr R JA MMBD4448WPT 100 80 57 250 500 2.0 4.0 3.5 4.0 625 -65 to +150 UNITS Volts Volts Volts mAmps mAmps Amps pF nSec o C/W o TJ,TSTG C ELECTRICAL CHARACTERISTICS ( At TA = 25 C unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage Maximum Average Reverse Current (Note 1) @ IF= 5.0 mA @ IF= 100 mA VR= 20V @TJ=25oC VR= 75V @TJ=150oC VR= 25V @TJ=150oC SYMBOL VF IR MMBD4448WPT 0.72 1.0 25nA 50 30 UNITS Volts uAmps 2004-10 NOTES : 1. Short duration test pulse used to minimize self-hesting effect. RATING CHARACTERISTIC CURVES ( MMBD4448WPT) FIG. 1 - FORWARD CHARACTERISTICS 1 FORWARD CURRENT, (A) 10u FIG. 2 - REVERSE CHARACTERISTICS o Ta=125 C REVERSE CURRENT, (A) 1u o Ta=75 C 100m o Ta= -40 C o Ta=0 C 100n 10n 1n o Ta=25 C o Ta= 0 C o Ta= -40 C 10m o Ta=25 C o Ta=75 C 1m o Ta=125 C 0.1n 100u 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE, (V) 20 40 60 80 100 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE Ta=125 C f = 1MHZ o AVERAGE FORWARD CURRENT, (%) 3.0 TOTAL CAPACITANCE , (pF) 2.5 2.0 1.5 1.0 0.5 0 120 100 80 60 40 20 0 FIG. 4 - TYPICAL FORWARD CURRENT DERATING CURVE 0 6 12 18 24 30 36 40 0 25 50 75 100 125 150 REVERSE VOLTAGE, (V) AMBIENT TEMPERATURE, (oC)