MMBD914PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching M MBD914PT FEATURE .041 (1.05) .033 (0.85) SOT-23 .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) * Maximum total power disspation is 225mW. * Peak forward current is 450mA. (1) (3) CONSTRUCTION * Silicon epitaxial planar (2) MARKING * 2D .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (2) (1) .045 (1.15) .033 (0.85) .019 (0.50) * Small surface mounting type. (SOT-23) * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density. (3) Dimensions in millimeters SOT-23 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 1uSec. Typical Junction Capacitance between Terminal (Note 1) Maximum Reverse Recovery Time (Note 2) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TRR TJ TSTG MMBD914PT 100 70 75 0.2 2.0 4.0 4.0 +150 -55 to +150 UNITS Volts Volts Volts Amps Amps pF nSec o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 10mA Maximum Average Reverse Current at VR= 75V SYMBOL VF IR MMBD914PT 1.0 2.5 UNITS Volts uAmps 2002-5 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at applied froward current of 10mA and reverse voltage of 6.0 volts. 3. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( MMBD914PT ) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURRENT AVERAGE FORWARD CURRENT, (%) 125 100 75 50 25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, (oC) FORWARD CURRENT, (A) 1.0 100m 10m 1m 100u 10u 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V) 75 o C 25 o C -25 o C FIG. 2 - FORWARD CHARACTERISiTICS FIG. 3 - REVERSE CHARACTERISTICS 1000 JUNCTION CAPACITANCE, (pF) Ta= 100oC FIG. 4 - TYPICAL JUNCTION CAPACITANCE 12 5 C o f=1MHz REVERSE CURRENT, (nA) 100 10 1 - 75oC 50oC 25oC 0oC 25oC 4 2 0.1 0.01 0 20 40 60 80 100 REVERSE VOLTAGE, (V) 0 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE, (V) FIG. 5 - REVERSE RECOVERY TIME 10 REVERSE RECOVERY TIME, (nS) 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 FORWARD CURRENT, (mA) VR=6V FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT 0.01µF D.U.T. 5 PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE