CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT GLASS PASSIVATED
S UPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere
FEATURES
* * * * * * For surface mounted applications Low profile package Built-in strain relief Superfast recovery times for high efficiency Metallurgically bonded construction Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Glass passivated junction * High temperature soldering guaranteed : 260oC/10 seconds at terminals
0.155 (3.94) 0.130 (3.30)
(1)
U BM11PT THRU UBM18PT
SMB
0.083 (2.11) 0.077 (1.96)
(2)
MECHANICAL DATA
Case: JEDEC SMB molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Weight: 0.003 ounces, 0.093 gram
0.190 (4.75) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 HZ, resistive or inductive load. For capacitive load, derate current by 20%.
0.220 (5.59) 0.205 (5.21)
Dimensions in inches and (millimeters)
SMB
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TL = 120 C Peak Forward Surge Current 8.3 ms single half sine-wave IFSM superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range CJ TJ, TSTG 15 -65 to +150 10 pF
o o
SYMBOL VRRM VRMS VDC IO
UBM11PT UBM12PT UBM13PT UBM14PT UBM15PT UBM16PT UBM17PT UBM18PT
UNITS Volts Volts Volts Amps
50 35 50
100 70 100
200 140 200
300 210 300 1.0
400 280 400
600 420 600
800 560 800
1000 700 1000
30
Amps
C
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 1.0 A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 2) NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts 2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A @ T A = 2 5 oC @ TA = 100oC IR 50 trr 35 45 uAmps nSec 2004-10 SYMBOL VF
UBM11PT UBM12PT UBM13PT UBM14PT UBM15PT UBM16PT UBM17PT UBM18PT
UNITS Volts uAmps
0.95 5.0
1.27
1.75
RATING CHARACTERISTIC CURVES ( UBM11PT THRU UBM18PT )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (-) 0 PULSE GENERATOR (NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A NOTES: 1. Rise Time = 7 ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10 ns max. Source Impedlance= 50 ohms. 1cm SET TIME BASE FOR 10 nS/cm -0.25A
AVERAGE FORWARD CURRENT, ( A )
FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE
1.0
(+) 25 Vdc (approx) (-)
D.U.T
0.5
Single Phase Half Wave 60Hz Resistive or Inductive Load
0
0
25 50 75 100 125 150 175
LEAD TEMPERATURE ( OC )
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT, ( A ) INSTANTANEOUS REVERSE CURRENT, (uA) 10
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
1PT
UB
M1
UB
TJ =75oC
1.0
0.1
.1
TJ =25 C
o
TJ =25oC
.01
.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
.001 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, ( V ) 1.8
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, ( A ) 35 JUNCTION CAPACITANCE, ( pF ) 30 25 20 15 10 5 0 1 2 5 10 20 NUMBER OF CYCLES AT 60 Hz 50 100
8.3ms Single Half Sine-Wave (JEDEC Method)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, ( V ) 40 100
TJ =25oC
UBM 11PT ~UBM 15PT
UBM1
6PT~U
BM18P
T
UB
M1
6P
T~
10
1.0
5PT
M1
UB
TJ =100oC
M1
Pulse Width = 300uS 1% Duty Cycle
~U
BM
14P
T
8P
T
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