BAT54S

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 BAT54 THRU BAT54S Features • • • Low Forward Voltage Surface Mount device Very small conduction losses 250mWatt, 30Volt Schottky Barrier Diode Type 4 LV3 B6 LD3 Single Dual Dual Dual Pin Configuration See page 3 Figure 1 Figure 2 Figure 3 Figure 4 Catalog Number BAT54 BAT54A BAT54C BAT54S Device Marking 1 KL1 KL2 KL3 KL4 2 L4 L42 L43 L44 3 L4P L4P L42 L43 L44 SOT-23 A D C B Maximum Ratings Continuos Reverse Voltage Forward Current Non-Repetitive Peak Forward Current t30V 10pF 5nS 430 °C/W Notes VF DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout VR = 25V .035 .900 .031 .800 IR V(BR) CJ trr RθJA Measured at 1.0MHz, VR=1.0V IF=IR=10mA; I(REC) = 1mA .037 .950 .037 .950 .079 2.000 inches mm www.cnelectr.com BAT54 thru BAT54S Fig.1 : Average forward power dissipation versus average forward current. PF(av)(W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 IF(av) (A) 0.00 0.00 0.05 0.10 0.15 0.20 δ=tp/T tp T Fig.2 : Average forward current versus ambient temperature ( δ = 1). 0.35 IF(av)(A) δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 0.30 0.25 δ=1 0.20 0.15 0.10 0.05 δ=tp/T T tp Tamb(°C) 0.25 0.30 0.00 0 25 50 75 100 125 150 Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values). Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm). Zth(j-a)/Rth(j-a) IM(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 IM 0.2 0.1 0.0 1E-3 1.00 δ = 0.5 δ = 0.2 Ta=25°C δ = 0.1 Ta=50°C 0.10 T Single pulse Ta=100°C t δ=0.5 t(s) 1E-2 1E-1 1E+0 tp(s) δ=tp/T tp 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 www.cnelectr.com BAT54 thru BAT54S Fig.5 : Reverse leakage current versus reverse voltage applied (typical values). IR(µA) 1E+2 Tj=100°C Fig.6 : Reverse leakage current versus junction temperature. IR(µA) 1E+4 VR=30V 1E+3 1E+2 1E+1 1E+1 1E+0 1E-1 1E-2 Tj=50°C 1E+0 Tj=25°C 1E-1 VR(V) 0 5 10 15 20 25 30 Tj(°C) 1E-2 0 25 50 75 100 125 150 Fig.7 : Junction capacitance versus reverse voltage applied (typical values). C(pF) 10 F=1MHz Tj=25°C Fig.8 : Forward voltage drop versus forward current (typical values). IFM(A) 5E-1 1E-1 Tj=100°C 5 1E-2 Tj=50°C 2 VR(V) 1 1 2 5 10 20 30 Tj=25°C 1E-3 VFM(V) 1E-4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Pin Configuration - Top View 3 1 Figure 1 2 Figure 2 Figure 3 Figure 4 BAT54 BAT54A BAT54C BAT54S www.cnelectr.com