BAV70

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 BAV70 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package C Pin Configuration Top View 350mW 75 Volt Dual Switching Diode A4 A A A D SOT-23 • • • Maximum Ratings Operating Temperature: -55 °C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance; 357Κ/W Junction To Ambient C B F E Electrical Characteristics @ 25°C Unless Otherwise Specified Reverse Voltage Average Rectified Output Current Power Dissipation Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time VR IO PTOT IFSM 75V 150mA 350mW 1.0A G H J K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 t=1s,Non-Repetitive VF 855mV 2.5µA 50µA 2 pF IR IFM = 10mA; TJ = 25°C* VR=75Volts TJ = 25°C TJ = 150°C DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm Measured at 1.0MHz, VR=0V Trr 4nS IF=10mA VR = 0V RL=500Ω *Pulse test: Pulse width 300 µsec, Duty cycle 2% CJ .037 .950 .037 .950 www.cnelectr.com BAV70 IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 10,000 IR, LEAKAGE CURRENT (nA) 100 1000 10 100 1.0 10 0.1 VR = 20V 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics 1 0 100 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 2 Leakage Current vs Junction Temperature www.cnelectr .com