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SD101AW THRU SD101CW
Small Signal Schottky Diodes
A B
Features
l l For general purpose applications The SD101AW to SD101CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction Guard ring. l Low Forward Voltage Drop
Mechanical Data
l Case: SOD-123 plastic case l Terminals: Solderable per MIL-STD-750, Method 2026 l Polarity: Indicated by Cathode Band
Maximum Ratings @ 25OC Unless Otherwise Specified
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Maximum sigle cycle surge 10us square wave Power Dissipation(Note 1) Thermal Resistance, Junction to Ambient Junction Tmperature Operation/Storage Temp. Range Symbol SD101AW SD101BW SD101CW VRRM
H
C
E
VRWM VR IFSM Pd R Tj TSTG
60V
50V
40V
D
2.0A 400mW 300K/W 125 C -55 to +150 C
O O
G
J
DIM A B C D E G H J
Electrical Characteristics @ 25OC Unless Otherwise Specified
Charateristic Leakage Current Symbol S D101AW SD101BW SD101CW S D101AW S D101BW SD101CW SD101AW SD101BW SD101CW S D101AW SD101BW SD101CW IR Max 200nA 200nA 200nA 0.41V 0.4V .39V 1V 0.95V 0.9V 2.0pF 2.1pF 2.2pF 1ns Test Condition V R =50V V R =40V V R =30V
INCHES MIN MAX .140 .152 .100 .112 .055 .071 - ---.053 .012 .031 .006 ----- ---.01 - ---.006
MM MIN 3.55 2.55 1.40 ----0.30 0.15 --------MAX 3.85 2.85 1.80 1.35 .78 ----.25 .15
NOTE
Maximum Forward Voltage Drop
VF
I F =1mA I F =15mA
SUGGESTED SOLDER PAD LAYOUT
0.093
Junction Cap.
Cj trr
V R =0V, f=1.0MHz I F =IR =5mA, recover t o 0.1I R
0.048”
Reverse Recovery Time
0.036”
Note: 1. Valid provided that electrodes are kept at
ambient temperature
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