SD101BWS

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 SD101AWS THRU SD101CWS Small Signal Schottky Diodes Features l l l Low Reverse Recovery Time Low Reverse Capacitance Low Forward Voltage Drop l Guard Ring Construction for Transient Protection Mechanical Data l Case: SOD-323 plastic case l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: Indicated by Cathode Band SOD323 A B Maximum Ratings @ 25oC Unless Otherwise Specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Maximum sigle cycle surge 10us square wave Power Dissipation(Note 1) Thermal Resistance, Junction to Ambient Junction Tmperature Operation/Storage Temp. Range Symbol VRRM VRWM VR VR(RMS) IFSM Pd R Tj TSTG 42V 35V 2.0A 400mW 650°C/W 125 C -55 to +150 C o o C E SD101AWS SD101BWS SD101CWS 60V 50V 40V H D 28V G J DIM A B C D E G H J Electrical Characteristics @ 25oC Unless Otherwise Specified C harateristic Symbol Max Leakage Current SD101AWS 200nA SD101BWS IR 200nA SD101CWS 200nA Maximum Forward SD101AWS Voltage Drop SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS Junction Cap. SD101AWS SD101BWS SD101CWS Reverse Recovery Time 0.41V 0.4V .39V 1V 0.95V 0.9V 2.0pF 2.1pF 2.2pF 1ns Test Condition V R =50V V R =40V V R =30V DIMENSIONS INCHES MM MIN MAX MIN MAX .090 .107 2.30 2.70 .063 .071 1.60 1.80 .045 .053 1.15 1.35 .031 .045 0.80 1.15 .010 .016 0.25 0.40 .004 .018 0.10 0.45 .004 .010 0.10 0.25 - ---.006 ----0.15 SUGGESTED SOLDER PAD LAYOUT 0.074" NOTE VF I F =1mA I F =15mA 0.027” Cj trr V R =0V, f=1.0MHz I F =IR =5mA, recover t o 0.1I R 0.022” Note: 1. Valid provided that electrodes are kept at ambient temperature www.cnelectr.com SD101AWS thru SD101CWS Figure 1. Typical variation of forward. current vs.fwd. Voltage for primary conduction through the schottky barrier mA 
 Figure 2. Typical forward conduction curve of combination Schottky barrier and PN junction guard ring mA 

A A B C B 
  C  
IF 
 IF 
  




 

  VF Figure 3.Typical variation of reverse current at versus temperature mA 

  
     
  
  










 

 
  VF Figure 4. Typical capacitance curve as a function of reverse voltage mA  A B C IR IR


VR VR www.cnelectr.com