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10A1

10A1

  • 厂商:

    CHONGQING

  • 封装:

  • 描述:

    10A1 - TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER - CHONGQING PINGYANG ELECTRONICS CO.,LTD

  • 数据手册
  • 价格&库存
10A1 数据手册
CHONGQING PINGYANG ELECTRONICS CO.,LTD. 10A05 THRU 10A10 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE:50-1000V CURRENT:10.0A FEATURES ·Low cost ·Low leakage ·Low forward voltage drop ·High current capability ·High surge current capability R-6 MECHANICAL DATA ·Case: Molded plastic ·Epoxy: UL94V-0 rate flame retardant ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity:Color band denotes cathode end ·Mounting position: Any ·Weight: 2.08 grams Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. 10A05 10A1 10A2 10A4 10A6 10A8 10A10 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at10.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25°C @ TA=100°C IR VRRM VRMS VDC Io IFSM VF 50 35 50 100 70 100 200 140 200 400 280 400 10.0 300 1.0 10 500 50 CJ RθJA 150 10 pF °C/W 600 420 600 800 560 800 1000 700 1000 V V V A A V µA Maximum Full Load Reverse Current Average, Full Cycle .375”(9.5mm) lead length at TL=75°C Typical Junction Capacitance (Note) Typical Thermal Resistance Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts 1 PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn

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