CHONGQING PINGYANG ELECTRONICS CO.,LTD.
10A05 THRU 10A10
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE:50-1000V CURRENT:10.0A
FEATURES
·Low cost ·Low leakage ·Low forward voltage drop ·High current capability ·High surge current capability
R-6
MECHANICAL DATA
·Case: Molded plastic ·Epoxy: UL94V-0 rate flame retardant ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity:Color band denotes cathode end ·Mounting position: Any ·Weight: 2.08 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. 10A05 10A1 10A2 10A4 10A6 10A8 10A10 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at10.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25°C @ TA=100°C IR VRRM VRMS VDC Io IFSM VF 50 35 50 100 70 100 200 140 200 400 280 400 10.0 300 1.0 10 500 50 CJ RθJA 150 10 pF
°C/W
600 420 600
800 560 800
1000 700 1000
V V V A A V
µA
Maximum Full Load Reverse Current Average, Full Cycle .375”(9.5mm) lead length at TL=75°C Typical Junction Capacitance (Note) Typical Thermal Resistance Notes:
Measured at 1MHz and applied reverse voltage of 4.0 volts
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