1N4006G

CHONGQING PINGYANG ELECTRONICS CO.,LTD. 1N4001G THRU 1N4007G TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE：50-1000V CURRENT：1.0A FEATURES ·High reliability ·Low leakage ·Low forward voltage drop ·High current capability DO-41 1.0(25.4) MIN. .205(5.2) .166(4.2) .034(0.9) .028(0.7) DIA. DIA. MECHANICAL DATA ·Case: Molded plastic ·Epoxy: UL94V-0 rate flame retardant ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity:Color band denotes cathode end ·Mounting position: Any ·Weight: 0.33 grams .107(2.7) .080(2.0) 1.0(25.4) MIN. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 1N4001G 1N4002G 1N4003G1N4004G1N4005G 1N4006G1N4007G units Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at 1.0A DC @ TA=25°C Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=100°C Maximum Full Load Reverse Current Average Full Cycle .375”(9.5mm) lead length at TL=75°C VRRM VRMS VDC Io 50 35 50 100 70 100 200 140 200 400 280 400 1.0 600 420 600 800 560 800 1000 700 1000 V V V A IFSM VF 30 1.1 5.0 A V IR 500 30 15 50 µA CJ Typical Junction Capacitance (Note) RθJA Typical Thermal Resistance Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts pF °C/W １ PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn