1N4150

CHONGQING PINGYANG ELECTRONICS CO.,LTD. 1N4150 THRU 1N4448 HIGH SPEED SWITCHING DIODES VOLTAGE：50-100V CURRENT：0.15 to 0.2 A FEATURES ·Silicon epitaxial planar diodes ·Low power loss, high efficiency ·Low lekage ·Low forward voltagh ·High speed switching ·High current capability ·High reliability DO-35 25.0MIN. L 25.0MIN. 0.52 2.0MAX. L: DO-34 DO-35 2.9 4.2 MECHANICAL DATA ·Case:Glass sealed case ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity: Color band denotes cathode end ·Mounting position: Any ·Weight: 0.13 gram MAX. MAX. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum power dissipation tamb=25°C Maximum Forward Voltage Maximum reverse current Maximum reverse recovery time Maximum junction capacitance Notes: VRRM Ptot VF IR trr CJ 1N4150 50 500 1.0/200 100/50 4.0 1N4151 75 500 1.0/50 50/50 2.0 4.0 1N4448 100 500 1.0/100 5000/75 4.0 units V mW V/mA nA/V nS pF 1-1N914A,1N914B is same as 1N914, except different forward voltage|: 1N914A-1.0/20 V/mA 1N914B-1.0/100 V/mA 2.Suffix “M” stands for “DO-34” package. (e.g.:1N4148M) １ PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn