BZX55C3V3

CHONGQING PINGYANG ELECTRONICS CO.,LTD. BZX55C2V4 THRU BZX55C75 SILICON PLANAR ZENER DIODES FEATURES ·Voltage Range: 2.7V to 75V ·Double siug type construction DO-41 1.0(25.4) MIN. .205(5.2) .166(4.2) .034(0.9) .028(0.7) DIA. DIA. MECHANICAL DATA ·Case: Molded plastic ·Epoxy: UL94V-0 rate flame retardant ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity:Color band denotes cathode end ·Mounting position: Any ·Weight: 0.33 grams .107(2.7) .080(2.0) 1.0(25.4) MIN. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. Absolute Maximum Ratings (Ta=25°C) SYMBOL VALUE 0.51) 150 units W °C Zener Current see Table “Characterstics” Power Dissipation at Tamb=25°C Junction Temperature 1) Ptot TJ Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature. Characteristics at Tamb=25°C SYMBOL Min. -- Typ. -- Max. 1.2 units V Forward Voltage at IF=250mA VF Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature. １ PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn CHONGQING PINGYANG ELECTRONICS CO.,LTD. SILICON PLANAR POWER ZENER DIODES Zener Voltage range1) TYPE Vznom V BZX55C2V4 BZX55C2V7 BZX55C3V0 BZX55C3V3 BZX55C3V6 BZX55C3V9 BZX55C4V3 BZX55C4V7 BZX55C5V1 BZX55C5V6 BZX55C6V2 BZX55C6V8 BZX55C7V5 BZX55C8V2 BZX55C9V1 BZX55C10 BZX55C11 BZX55C12 BZX55C13 BZX55C15 BZX55C16 BZX55C18 BZX55C20 BZX55C22 BZX55C24 BZX55C27 BZX55C30 BZX55C33 BZX55C36 BZX55C39 BZX55C43 BZX55C47 BZX55C51 BZX55C56 BZX55C62 BZX55C68 BZX55C75 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 Dynamic recsistance rZJT3) mA 85 85 85 85 85 85 75 60 35 25 10 8.0 7.0 7.0 10 15 20 20 26 30 40 50 55 55 80 80 80 80 80 90 90 110 125 135 150 200 250 IZM @ TA IZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 for VZT V2) 2.28 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 2.56 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 Reverse leakage current 2) IR at VR µA 50 10 4 2 2 2 1.0 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Max. Zener Current IZM @ TA4) mA 155 135 125 115 105 95 90 85 80 70 64 58 53 47 43 40 36 32 29 27 24 21 20 18 16 14 13 12 11 10 9.2 8.5 7.8 7 6.4 5.9 5.3 Ω 600 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 110 170 170 220 220 220 220 220 220 220 500 600 700 700 1000 1000 1000 1500 mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 V 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 ２ PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn CHONGQING PINGYANG ELECTRONICS CO.,LTD. 1) 2) Tested with pulses tp=20 ms. Tolerance designation — The type numbers listed have zener voltage min/max limits as shown. Device tolerance of ±2% are indicated by a “B” instead of a “C”. Zener voltage is measured with the device junction in thermal equilibrium at the lead temperature of 30°C ±1°C and 3/8, lead length. 3) ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limtis are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 1.0 kHz. 4) This data was calculated using nominal voltages. The maximum current handling capability on a worst case basis is limited by the actual zener voltage at the operating point and the power derating curve. ３ PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn