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P600M-6A10

P600M-6A10

  • 厂商:

    CHONGQING

  • 封装:

  • 描述:

    P600M-6A10 - TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER - CHONGQING PINGYANG ELECTRONICS CO.,LTD

  • 数据手册
  • 价格&库存
P600M-6A10 数据手册
CHONGQING PINGYANG ELECTRONICS CO.,LTD. 6A05/P600A THRU 6A10/P600M TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE:50-1000V CURRENT:6.0A FEATURES ·Low cost ·Low leakage ·Low forward voltage drop ·High current capability ·High surge current capability R-6 MECHANICAL DATA ·Case: Molded plastic ·Epoxy: UL94V-0 rate flame retardant ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity:Color band denotes cathode end ·Mounting position: Any ·Weight: 2.08 grams Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. P600A P600B P600D P600G P600J P600K SYMBOL 6A05 6A1 6A2 6A4 6A8 6A8 Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 Maximum RMS Voltage VRMS 35 70 140 280 420 560 Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 Maximum Average Forward rectified Current at TA=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at 6.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25°C IR @ TA=100°C Maximum Full Load Reverse Current Average, Full Cycle .375”(9.5mm) lead length at TL=75°C Typical Junction Capacitance (Note) Typical Thermal Resistance Notes: Io IFSM VF 6.0 250 1.1 10 500 50 CJ RθJA 150 10 pF °C/W P600M units 6A10 1000 V 700 V 1000 V A A V µA Measured at 1MHz and applied reverse voltage of 4.0 volts 1 PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn
P600M-6A10 价格&库存

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