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R5000

R5000

  • 厂商:

    CHONGQING

  • 封装:

  • 描述:

    R5000 - HIGH VOLTAGE SILICON RECTIFIER - CHONGQING PINGYANG ELECTRONICS CO.,LTD

  • 数据手册
  • 价格&库存
R5000 数据手册
CHONGQING PINGYANG ELECTRONICS CO.,LTD. R4000 THRU R5000 HIGH VOLTAGE SILICON RECTIFIER VOLTAGE:4000-5000V CURRENT:0.2A FEATURES ·Low cost ·Low leakage ·Low forward voltage drop ·High current capability DO-15 1.0(25.4) MIN. .300(7.6) .230(5.8) .034(0.9) .028(0.7) DIA. MECHANICAL DATA ·Case: Molded plastic ·Epoxy: UL94V-0 rate flame retardant ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity:Color band denotes cathode end ·Mounting position: Any ·Weight: 0.38 grams .140(3.6) .104(2.6) 1.0(25.4) MIN. DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=50°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Forward Voltage Drop per element at 0.2A DC @ TA=25°C Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=100°C Maximum Full Load Reverse Current Average, Full Cycle .375”(9.5mm) lead length at TL=75°C CJ Typical Junction Capacitance (Note) Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts VRRM VRMS VDC Io R4000 4000 2800 4000 0.2 R5000 5000 3500 5000 units V V V A IFSM VF 30 5.0 5.0 A V IR 100 30 30 µA pF 1 PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn
R5000 价格&库存

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