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S1D

S1D

  • 厂商:

    CHONGQING

  • 封装:

  • 描述:

    S1D - SURFACE MOUNT SILICON RECTIFIER - CHONGQING PINGYANG ELECTRONICS CO.,LTD

  • 数据手册
  • 价格&库存
S1D 数据手册
CHONGQING PINGYANG ELECTRONICS CO.,LTD. S1A THRU S1M SURFACE MOUNT SILICON RECTIFIER VOLTAGE:50-1000V CURRENT:1.0A FEATURES ·Ideal for surface mounted applications ·Low leakage current ·Glass passivated junction SMB(DO-214AA) .083(2.11) .075(1.91) .185(4.70) .160(4.06) .012(0.305) .006(0.152) .155(3.94) .130(3.30) MECHANICAL DATA ·Case: Molded plastic ·Epoxy: UL94V-0 rate flame retardant ·Terminals: Solder plated,solderable per MIL-STD- 750, Method 2026 ·Polarity: As marked ·Mounting position: Any ·Weight: 0.093 grams .096(2.44) .084(2.13) .060((1.52) .030(0.76) .008(0.203) .002(0.051) .220(5.59) .200(5.08) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL S1A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25°C @ TA=125°C VRRM VRMS VDC Io IFSM VF IR 50 35 50 S1B 100 70 100 S1D 200 140 200 S1G 400 280 400 1.0 30 1.1 5.0 100 12 30 S1J 600 420 600 S1K 800 560 800 S1M units 1000 700 1000 V V V A A V µA °C/W Typical Thermal Resistance (Note2) RθJL Typical Junction Capacitance (Note1) CJ Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts 2.Thermal Resistance (Junction to Ambient), .0.2×0.2in2 (5×5mm2) copper pads to each terminal pF 1 PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn

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