P r o d uPA241a t i o n FFr room m C c t IInnnnoovv a
CPA241 CPA241
SUPPLY VOLTAGE, +VS to –VS OUTPUT CURRENT, continuous INPUT VOLTAGE, differential INPUT VOLTAGE, common mode TEMPERATURE, junction 350V 60mA ±16V ±VS 150°C
High Power Operational Amplifier
ABSOLUTE MAXIMUM RATINGS
NOTE:
Refer to parent product data sheet PA241 for typical AC electrical characteristics, precautions, applications and other test parameters.
DC WAFER PROBED SPECIFICATIONS
PARAMETER OFFSET VOLTAGE, initial BIAS CURRENT, initial COMMON MODE REJECTION VOLTAGE SWING SUPPLY CURRENT, quiescent TEST CONDITIONS1 VS = ±50V VCM = ±90 V DC IO = 40mA VS = ±50 V 84 ±VS–12 1.8 MIN TYP 15 56 94 ±VS–10 2.1 MAX 40 200 2.3 UNITS mV pA dB V mA
NOTES:
1. 2.
Unless otherwise stated VS = ±50 V, TA = 25°C, DC input specification ± value given. Sample tested by wafer to 95%.
TYPICAL EXTERNAL CONNECTIONS
+VS RI VIN 5 1 2 6 –VS 3 4 RF
DIE LAYOUT
4 5 6
9 8
*
RCL RL
3 7
12 2 10 1 11
*
CC
8 9
* Required component and value if given. Optional balance components are recommended values. CC is NPO, rated for full supply voltage –VS to +VS. NOTE: Diagram for connection illustration only. All op amp configurations are possible. Pad 1 2 3 4 Function Output Compensation Compensation Current Limit Pad 5 6 8 9 Function +Vs -Vs +IN -IN
Dimension: 154.5 x 117.5 ± 2.5 Mils. Thickness: 15 Mil (380µ). Backside Metal: None, Silicon. Bond pad: 5 Mil sq (127µ) AI. Make no connection to bond pads not listed by function. Note: The backside of the CPA241 die is isolated up to 500V. The top side walls of the CPA241 die are isolated up to 300V. Ordering Information: Order #: CPA241DI80: Die are only available in waffle packages with a total of 80 die per package.
CAUTION
The CPA241 is a MOSFET amplifier. ESD handling procedures must be observed
CPA241U
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MAY 2009 1 APEX − CPA241UREVC
CPA241
P r o d u c t I n n o v a t i o nF r o m
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CPA241U