CLD171

CLD171 Large Active Area Silicon Planar photodiode ® This product is tested to satisfy the conditions of both the CLD171 and the CLD171R. Clairex September, 2002  Technologies, Inc. 0.253 (6.43) 0.243 (6.17) 0.080 (2.03) 0.070 (1.78) 1.00 (25.4) min. ANODE 0.288 (7.32) 0.278 (7.06) CATHODE 0.200 (5.08) 0.065 (1.65) max Anode lead is identified by red dot on side of substrate. Case 13 ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) features • • • • 130° acceptance angle 860nm peak response 125°C operating temperature usable for visible through near-IR absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature........................................................................-40°C to +125°C operating temperature.....................................................................-40°C to +125°C lead soldering temperature(1) .......................................................................... 260°C reverse voltage ...................................................................................................30V continuous power dissipation(2) ....................................................................200mW description The CLD171 and CLD171R, are 0.122" x 0.122" active area silicon photodiodes featuring high linearity and low dark current. They are epoxy encapsulated for lower cost applications. Wide acceptance angle permits use in IR air communications, ambient light detection, safety and monitoring, security systems, etc. notes: 1. 2. 0.06” (1.5mm) from the header for 5 seconds maximum. Derate linearly 1.6mW/°C free air temperature to TA = +125°C. If higher operating temperature is required, see the CLD160. electrical characteristics (TA = 25°C unless otherwise noted) symbol ISC ID VO VBR CJ tr, tf ΘHP note: 3. 4. parameter Short-circuit current(3) Dark current Open circuit voltage(3) Reverse breakdown Junction capacitance Output rise and fall time(4) Total angle at half sensitivity points min 25 - typ 70 0.35 130 max 10 5.0 200 12 - units µA nA nA V V pF µs deg. test conditions VBIAs =0V, Ee = 5mW/cm VF = 100mV, Ee = 0 VR = 15V, Ee = 0 Ee = 5mW/cm2 IR = 100µA VBIAS = 0V, f = 1MHz RL = 1kΩ 2 Radiation source is a frosted tungsten lamp at a color temperature of 2854K or equivalent. Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and Ee = 20mW/cm2. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 3/15/06 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com