CLE336

CLE336 850nm Super-Efficient AlGaAs Emitter Narrow Radiation Pattern 0.156 (3.96) 0.136 (3.45) 1.00 (25.4) min. ® Clairex April, 2006  Technologies, Inc. 0.100 (2.54) dia. 0.215 (5.46) 0.205 (5.21) CATHODE 0.165 (4.19) 0.145 (3.68) 0.190 (4.83) 0.176 (4.47) (connected to case) ANODE 0.025 (0.64) max. 0.050 (1.27) nom 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) Case 7 ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) features • 150°C operating temperature • ± 4.5° beam angle • exceptionally high power output • 845nm wavelength • TO-46 hermetic package • cathode connected to case • RoHS compliant description The CLE336 is an advanced, highefficiency, high speed AlGaAs infrared emitting diode. Output power exceeds standard AlGaAs emitters by 50%. A special lens provides a sharply focused beam pattern. The CLE336 is designed for use anywhere a narrow beam pattern and very high output are required. absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature....................................................................... -65°C to +150°C operating temperature.................................................................... -65°C to +150°C (1) lead soldering temperature .......................................................................... 260°C (2) continuous forward current .........................................................................100mA peak forward current (1.0ms pulse width, 10% duty cycle) ..................................1A reverse voltage.....................................................................................................5V continuous power dissipation(3) ....................................................................200mW notes: 1. 0.06” (1.5mm) from the header for 5 seconds maximum. 2. Derate linearly 0.64mA/°C free air temperature to TA = +150°C. 3. Derate linearly 1.28mW/°C free air temperature to TA = +150°C. electrical characteristics (TA = 25°C unless otherwise noted) symbol PO Ee VF IR λP BW θHP tr Tf parameter Total power output Irradiance (4) min 10 - typ 20 3.5 1.7 845 40 9.0 11 7.0 max 1.9 10 - units mW mW/cm V µA nm nm deg. ns ns 2 test conditions IF = 100mA IF = 100mA IF = 100mA VR = 5V IF = 100mA IF = 100mA IF = 100mA IF = 100mA, f = 1KHz, Duty Cycle = 50% Forward voltage Reverse current Peak emission wavelength Spectral bandwidth at half power points Emission angle at half power points Radiation rise time Radiation fall time Note: 4. Ee is a measure of irradiance (power/unit area) within a 0.444" (1.128cm) diameter area, centered on the mechanical axis of the device and spaced 2.54" (6.45cm) from the lens side of the tab. This is geometrically equivalent to a 10° cone. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 11/08/06 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com