CLE400F

CLE400F Four leaded Multiple Emitter Chip Surface Mount Package 0.056 (1.42) 00.025 (0.63) 25 (0.63) 0.012 (0.30) 2 1 0.110 (2.81) 0.110 (2.81) PIN 1 MARK ® Clairex  Technologies, Inc. March, 2002 0.006 (0.15) 0.028 (0.71) 2 3 4 0.006 (0.15) 0.063 (1.60) 0.275 ± 0.010 (6.99 ± 0.25) 0.063 (1.60) 0.075 (1.89) 3 4 0.038 (0.97) All dimensions are in inches (millimeters). Unless otherwise indicated, tolerance is ± 0.005 (0.12) 0.066 (0.68) 0.069 (1.75) 0.056 (1.42) 0.032 (0.81) 1 features • ±70° emission angle • wide variety of chip combinations • wide variety of lenses and apertures absolute maximum ratings (TA = 25°C unless otherwise stated) description The CLE400F can contain three 850 nm IRED chips which feature double/ double heterojunction (DDH) notes: construction for increased quantum 1. For 5 seconds maximum efficiency and reliability. This device 2. Derate linearly 0.213mA/°C from 25°C free air temperature to TA = +100°C. is one example of a very broad line of 3. Derate linearly 0.85mW/°C from 25°C free air temperature to TA = +100°C. devices made possible by four leaded package configuration. One to three chips can be attached. Multiple chip devices can be series or parallel connected. Wavelengths can range from ultra-violet (390nm) through the visible spectrum into the near infrared (940nm). Also different lenses, apertures and lead configurations are available. The standard lensing is clear epoxy. storage temperature........................................................................-40°C to +100°C operating temperature.....................................................................-40°C to +100°C lead soldering temperature(1)...........................................................................260°C (2) continuous forward current ..............................................................20mA/per chip peak forward current (1.0ms pulse width, 10% duty cycle) .................................. 1A reverse voltage..................................................................................................... 5V continuous power dissipation(3) .......................................................................80mW electrical characteristics (TA = 25°C unless otherwise noted) symbol PO VF IR λp BW θHP parameter Total power output(4) Forward voltage Reverse current Peak wavelength emission Spectral bandwidth at half power points Emission angle at half power points min 9.0 - typ 13.0 850 60 140 max 1.4 10 - units mW V µA nm nm deg. test conditions IF = 60mA (total cathode current) IF = 20mA per chip VR = 5V IF = 20mA IF = 20mA IF = 20mA note: 4. Power output is measured in an integrating sphere. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 4/17/07 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com